GB2085227B - Semiconductor device having localized electroluminescent diodes - Google Patents

Semiconductor device having localized electroluminescent diodes

Info

Publication number
GB2085227B
GB2085227B GB8129790A GB8129790A GB2085227B GB 2085227 B GB2085227 B GB 2085227B GB 8129790 A GB8129790 A GB 8129790A GB 8129790 A GB8129790 A GB 8129790A GB 2085227 B GB2085227 B GB 2085227B
Authority
GB
United Kingdom
Prior art keywords
localized
semiconductor device
electroluminescent diodes
electroluminescent
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8129790A
Other versions
GB2085227A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2085227A publication Critical patent/GB2085227A/en
Application granted granted Critical
Publication of GB2085227B publication Critical patent/GB2085227B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)
GB8129790A 1980-10-06 1981-10-02 Semiconductor device having localized electroluminescent diodes Expired GB2085227B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8021346A FR2491714A1 (en) 1980-10-06 1980-10-06 SEMICONDUCTOR DEVICE WITH LOCALIZED ELECTROLUMINESCENT DIODES AND METHOD OF MANUFACTURING THE SAME

Publications (2)

Publication Number Publication Date
GB2085227A GB2085227A (en) 1982-04-21
GB2085227B true GB2085227B (en) 1984-06-06

Family

ID=9246580

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8129790A Expired GB2085227B (en) 1980-10-06 1981-10-02 Semiconductor device having localized electroluminescent diodes

Country Status (4)

Country Link
JP (1) JPS5791576A (en)
DE (1) DE3138804A1 (en)
FR (1) FR2491714A1 (en)
GB (1) GB2085227B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736449B2 (en) * 1984-11-02 1995-04-19 ゼロツクス コーポレーシヨン Manufacturing method of light emitting diode printed array
FR2573897B1 (en) * 1984-11-23 1987-03-20 Radiotechnique Compelec LIGHT EMITTING DIODE MATRIX AND MANUFACTURING METHOD THEREOF
KR910006706B1 (en) * 1988-12-12 1991-08-31 삼성전자 주식회사 Manufacturing method of light emitted diode array head
KR940005454B1 (en) * 1991-04-03 1994-06-18 삼성전자 주식회사 Compound semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2079612A5 (en) * 1970-02-06 1971-11-12 Radiotechnique Compelec
DE2235865A1 (en) * 1972-07-21 1974-01-31 Licentia Gmbh Multi-element semiconductor device - having implanted semi-insulating zones separating (photodiode) elements
JPS5193688A (en) * 1975-02-14 1976-08-17 Matorikusuno seizohoho
US4032373A (en) * 1975-10-01 1977-06-28 Ncr Corporation Method of manufacturing dielectrically isolated semiconductive device
JPS54117692A (en) * 1978-03-03 1979-09-12 Nec Corp Semiconductor light emitting diode

Also Published As

Publication number Publication date
DE3138804A1 (en) 1982-06-03
FR2491714B1 (en) 1984-04-13
GB2085227A (en) 1982-04-21
JPS5791576A (en) 1982-06-07
FR2491714A1 (en) 1982-04-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921002