GB2070331B - Vertical mosfet with a shield electrode - Google Patents

Vertical mosfet with a shield electrode

Info

Publication number
GB2070331B
GB2070331B GB8104365A GB8104365A GB2070331B GB 2070331 B GB2070331 B GB 2070331B GB 8104365 A GB8104365 A GB 8104365A GB 8104365 A GB8104365 A GB 8104365A GB 2070331 B GB2070331 B GB 2070331B
Authority
GB
United Kingdom
Prior art keywords
shield electrode
vertical mosfet
mosfet
vertical
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8104365A
Other languages
English (en)
Other versions
GB2070331A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB2070331A publication Critical patent/GB2070331A/en
Application granted granted Critical
Publication of GB2070331B publication Critical patent/GB2070331B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10W20/495—
GB8104365A 1980-02-22 1981-02-12 Vertical mosfet with a shield electrode Expired GB2070331B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
GB2070331A GB2070331A (en) 1981-09-03
GB2070331B true GB2070331B (en) 1984-05-23

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8104365A Expired GB2070331B (en) 1980-02-22 1981-02-12 Vertical mosfet with a shield electrode

Country Status (8)

Country Link
JP (1) JPS56131961A (enExample)
DE (1) DE3105693A1 (enExample)
FR (1) FR2476914B1 (enExample)
GB (1) GB2070331B (enExample)
IT (1) IT1135091B (enExample)
PL (1) PL136606B1 (enExample)
SE (1) SE456291B (enExample)
YU (1) YU41520B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
DE3210353A1 (de) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte darlingtonschaltung
EP0205639A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with substrate referenced shield
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
CN100508211C (zh) * 2003-01-21 2009-07-01 西北大学 快速开关功率绝缘栅半导体器件
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
CN102569385B (zh) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos结构及其制备方法
CN102569386B (zh) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (enExample) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
PL229786A1 (enExample) 1981-09-18
PL136606B1 (en) 1986-03-31
SE456291B (sv) 1988-09-19
DE3105693C2 (enExample) 1992-12-10
YU42481A (en) 1983-06-30
FR2476914A1 (fr) 1981-08-28
SE8100148L (sv) 1981-08-23
YU41520B (en) 1987-08-31
IT8119216A0 (it) 1981-01-20
FR2476914B1 (fr) 1985-10-18
GB2070331A (en) 1981-09-03
DE3105693A1 (de) 1981-11-26
JPH0213830B2 (enExample) 1990-04-05
IT1135091B (it) 1986-08-20
JPS56131961A (en) 1981-10-15

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970212