GB2020899A - Planar transmission line - Google Patents

Planar transmission line

Info

Publication number
GB2020899A
GB2020899A GB7916233A GB7916233A GB2020899A GB 2020899 A GB2020899 A GB 2020899A GB 7916233 A GB7916233 A GB 7916233A GB 7916233 A GB7916233 A GB 7916233A GB 2020899 A GB2020899 A GB 2020899A
Authority
GB
United Kingdom
Prior art keywords
layer
transmission line
schottky junction
planar transmission
metal conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7916233A
Other versions
GB2020899B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Comsat Corp
Original Assignee
Comsat Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comsat Corp filed Critical Comsat Corp
Publication of GB2020899A publication Critical patent/GB2020899A/en
Application granted granted Critical
Publication of GB2020899B publication Critical patent/GB2020899B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H01P1/227—Strip line attenuators

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Waveguides (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A planar transmission line for use as an attenuator or switch is formed on a semiconductor substrate consisting of a high resistivity semiconductor material 10 and a thin, conductive semiconductor layer 12. Metal conductors 14 and 16 are formed on the conductive semiconductor layer 12 to form the transmission line and at least one of the metal conductors forms a Schottky junction with the layer 12. The gap 18 between the metal conductors 14 and 16 defines a shunt current path through the layer 12. By applying a bias voltage to the metal conductor in the Schottky junction, the conductivity of the shunt path can be controlled by changing the depletion layer width across the Schottky junction. A plurality of planar transmission lines can be combined into multi-port networks, examples of which are cross-bar switching devices and beta element switching devices. <IMAGE>
GB7916233A 1978-05-11 1979-05-10 Planar transmission line Expired GB2020899B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US90496678A 1978-05-11 1978-05-11

Publications (2)

Publication Number Publication Date
GB2020899A true GB2020899A (en) 1979-11-21
GB2020899B GB2020899B (en) 1982-07-28

Family

ID=25420057

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7916233A Expired GB2020899B (en) 1978-05-11 1979-05-10 Planar transmission line

Country Status (7)

Country Link
JP (1) JPS54149448A (en)
CA (1) CA1138572A (en)
DE (1) DE2918921A1 (en)
FR (1) FR2425734A1 (en)
GB (1) GB2020899B (en)
NL (1) NL7903689A (en)
SE (1) SE7904141L (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2149208A (en) * 1983-10-28 1985-06-05 Gen Electric Co Plc Solid-state bloch-type electronic oscillators
EP1501151A1 (en) * 2003-07-24 2005-01-26 Murata Manufacturing Co., Ltd. High frequency switch and electronic device containing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2472269A1 (en) * 1979-12-19 1981-06-26 Labo Electronique Physique HIGH FREQUENCY SEMICONDUCTOR POWER LIMITER
DE3210028A1 (en) * 1982-03-19 1984-02-02 ANT Nachrichtentechnik GmbH, 7150 Backnang SWITCH FOR HIGH FREQUENCY ENERGY

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2226094A5 (en) * 1972-08-07 1974-11-08 Labo Cent Telecommunicat
GB1495527A (en) * 1974-06-14 1977-12-21 Marconi Co Ltd Switching arrangements
US4090155A (en) * 1975-05-12 1978-05-16 Agency Of Industrial Science & Technology Transmission line for electromagnetic wave

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2149208A (en) * 1983-10-28 1985-06-05 Gen Electric Co Plc Solid-state bloch-type electronic oscillators
EP1501151A1 (en) * 2003-07-24 2005-01-26 Murata Manufacturing Co., Ltd. High frequency switch and electronic device containing the same
US6998934B2 (en) 2003-07-24 2006-02-14 Murata Manufacturing Co., Ltd. High frequency switch and electronic device including the same

Also Published As

Publication number Publication date
JPS54149448A (en) 1979-11-22
DE2918921A1 (en) 1979-11-22
FR2425734A1 (en) 1979-12-07
CA1138572A (en) 1982-12-28
GB2020899B (en) 1982-07-28
SE7904141L (en) 1979-11-12
NL7903689A (en) 1979-11-13

Similar Documents

Publication Publication Date Title
US2900531A (en) Field-effect transistor
US2769926A (en) Non-linear resistance device
JPS5580886A (en) Semiconductor memory element and memory circuit
SE7906961L (en) INSULATING BERORGAN
EP0354804A3 (en) Superconductive transistor
US2812446A (en) Photo-resistance device
GB2020899A (en) Planar transmission line
GB1331761A (en) Epi base high speed power transistor
US3430112A (en) Insulated gate field effect transistor with channel portions of different conductivity
JPS564290A (en) Superconductive element
JPS5458378A (en) Semiconductor device and its usage
EP0178148A3 (en) Thin film photodetector
JPS6480073A (en) Semiconductor device
JPS5615075A (en) Semiconductor device
GB1114762A (en) Improvements relating to microwave devices
IE792474L (en) Switching device
US3648124A (en) Gated metal-semiconductor transition device
SU1585834A1 (en) Memory unit
Johnson More on the solid‐state amplifier and Dr. Lilienfeld
JPS52127157A (en) Manufacture of semiconductor
SU963123A1 (en) Thin-film switching element
UA9293A1 (en) Controlled mis-resistor
JPS57103362A (en) Field effect transistor
JPS6413781A (en) Superconducting element
GB2002582A (en) Two-terminal semiconductor microwave device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee