GB2002582A - Two-terminal semiconductor microwave device - Google Patents
Two-terminal semiconductor microwave deviceInfo
- Publication number
- GB2002582A GB2002582A GB7832352A GB7832352A GB2002582A GB 2002582 A GB2002582 A GB 2002582A GB 7832352 A GB7832352 A GB 7832352A GB 7832352 A GB7832352 A GB 7832352A GB 2002582 A GB2002582 A GB 2002582A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contact
- substrate
- devices
- active layer
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
This disclosure relates to two- terminal solid state microwave devices, such as transferred electron and avalanche effect devices, comprising a high-conductivity semiconductor substrate 1 formed over at least a part of one major surface with an active layer 4 of semiconductor material, a first contact 2 providing electrical contact with the active layer to define the active region of the device, and a second contact 3 on the same side of the substrate, providing a relatively low impedance ohmic contact to the substrate in operation of the device at the operating bias current for the active region. To simplify fabrication, both contacts may have substantially identical structures with the second contact also overlying the active layer. In the case of transferred electron devices as shown, the area of the second contact is then made greater than the first so that it is biased below threshold at the operating bias current for the active region; while in the case of avalanche effect devices having rectifying semiconductor junction contacts, only the first contact is reverse biased in operation, the second contact being forward biased to behave as an ohmic contact to the substrate. Methods of fabricating such devices are also disclosed. <IMAGE>
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7832352A GB2002582B (en) | 1977-08-10 | 1978-08-04 | Solid state microwave devices and their fabrication |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3360977 | 1977-08-10 | ||
| GB7832352A GB2002582B (en) | 1977-08-10 | 1978-08-04 | Solid state microwave devices and their fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2002582A true GB2002582A (en) | 1979-02-21 |
| GB2002582B GB2002582B (en) | 1982-01-20 |
Family
ID=26261941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7832352A Expired GB2002582B (en) | 1977-08-10 | 1978-08-04 | Solid state microwave devices and their fabrication |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2002582B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4525732A (en) * | 1983-08-31 | 1985-06-25 | Texas Instruments Incorporated | Distributed IMPATT structure |
-
1978
- 1978-08-04 GB GB7832352A patent/GB2002582B/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4525732A (en) * | 1983-08-31 | 1985-06-25 | Texas Instruments Incorporated | Distributed IMPATT structure |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2002582B (en) | 1982-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |