GB2019645A - Semiconductor device protected against overvoltages - Google Patents

Semiconductor device protected against overvoltages

Info

Publication number
GB2019645A
GB2019645A GB7913769A GB7913769A GB2019645A GB 2019645 A GB2019645 A GB 2019645A GB 7913769 A GB7913769 A GB 7913769A GB 7913769 A GB7913769 A GB 7913769A GB 2019645 A GB2019645 A GB 2019645A
Authority
GB
United Kingdom
Prior art keywords
region
type
resistivity
layer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7913769A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of GB2019645A publication Critical patent/GB2019645A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB7913769A 1978-04-20 1979-04-20 Semiconductor device protected against overvoltages Withdrawn GB2019645A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22499/78A IT1094080B (it) 1978-04-20 1978-04-20 Dispositivo a semiconduttore protetto contro le sovratensioni

Publications (1)

Publication Number Publication Date
GB2019645A true GB2019645A (en) 1979-10-31

Family

ID=11197088

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7913769A Withdrawn GB2019645A (en) 1978-04-20 1979-04-20 Semiconductor device protected against overvoltages

Country Status (6)

Country Link
JP (1) JPS54158877A (de)
DE (1) DE2915918A1 (de)
FR (1) FR2423867A1 (de)
GB (1) GB2019645A (de)
IT (1) IT1094080B (de)
SE (1) SE7903441L (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor
EP0210376A1 (de) * 1985-07-29 1987-02-04 Motorola, Inc. Niederspannungsklemme
EP0226469A1 (de) * 1985-12-12 1987-06-24 Mitsubishi Denki Kabushiki Kaisha Integrierte Halbleiterschaltungsanordnung
EP0443055A1 (de) * 1990-02-20 1991-08-28 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen
EP0477429A1 (de) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100467A (en) * 1980-01-14 1981-08-12 Nec Corp Protecting device against electrostatic destruction
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
JPS6159773A (ja) * 1984-08-30 1986-03-27 Fujitsu Ltd 半導体集積回路装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor
EP0210376A1 (de) * 1985-07-29 1987-02-04 Motorola, Inc. Niederspannungsklemme
EP0226469A1 (de) * 1985-12-12 1987-06-24 Mitsubishi Denki Kabushiki Kaisha Integrierte Halbleiterschaltungsanordnung
EP0443055A1 (de) * 1990-02-20 1991-08-28 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen
EP0477429A1 (de) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen
US5170240A (en) * 1990-09-28 1992-12-08 Siemens Aktiengesellschaft Input protection structure for integrated circuits

Also Published As

Publication number Publication date
FR2423867A1 (fr) 1979-11-16
IT1094080B (it) 1985-07-26
IT7822499A0 (it) 1978-04-20
DE2915918A1 (de) 1979-10-31
JPS54158877A (en) 1979-12-15
SE7903441L (sv) 1979-10-21

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)