GB2004117A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB2004117A
GB2004117A GB7833922A GB7833922A GB2004117A GB 2004117 A GB2004117 A GB 2004117A GB 7833922 A GB7833922 A GB 7833922A GB 7833922 A GB7833922 A GB 7833922A GB 2004117 A GB2004117 A GB 2004117A
Authority
GB
United Kingdom
Prior art keywords
region
magnetic field
annular
regions
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7833922A
Other versions
GB2004117B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB7833922A priority Critical patent/GB2004117B/en
Publication of GB2004117A publication Critical patent/GB2004117A/en
Application granted granted Critical
Publication of GB2004117B publication Critical patent/GB2004117B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device

Abstract

In magnetic field sensors of the kind incorporating a circular p-n-p-n device, within which is formed a carrier domain which, when an appropriate magnetic field is applied, rotates around the centre of the structure at a frequency dependent on the flux density, high sensitivity is achieved by using a p-n-p-n device whose four regions (2, 3, 4, 5) all extend to a planar surface (1) of the device, one end region (3) being centrally disposed and the other (5) forming an annular intrusion into the adjacent intermediate region (4), which is also annular and has contact made to it only outwardly of the region (5). The device may be fabricated by diffusion, and has electrodes preferably providing plural contacts to at least one of the intermediate regions (2, 4). Various ways of utilising the device are disclosed. <IMAGE>
GB7833922A 1977-09-08 1978-08-18 Semiconductor devices Expired GB2004117B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7833922A GB2004117B (en) 1977-09-08 1978-08-18 Semiconductor devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB3755577 1977-09-08
GB7833922A GB2004117B (en) 1977-09-08 1978-08-18 Semiconductor devices

Publications (2)

Publication Number Publication Date
GB2004117A true GB2004117A (en) 1979-03-21
GB2004117B GB2004117B (en) 1982-05-26

Family

ID=26263494

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7833922A Expired GB2004117B (en) 1977-09-08 1978-08-18 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB2004117B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018750A1 (en) * 1979-05-04 1980-11-12 THE GENERAL ELECTRIC COMPANY, p.l.c. Carrier-domain magnetometers
EP0043191A1 (en) * 1980-06-25 1982-01-06 THE GENERAL ELECTRIC COMPANY, p.l.c. Carrier-domain magnetometers
EP0286079A2 (en) * 1987-04-09 1988-10-12 Fujitsu Limited Sensing devices utilizing magneto electric transducers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018750A1 (en) * 1979-05-04 1980-11-12 THE GENERAL ELECTRIC COMPANY, p.l.c. Carrier-domain magnetometers
EP0043191A1 (en) * 1980-06-25 1982-01-06 THE GENERAL ELECTRIC COMPANY, p.l.c. Carrier-domain magnetometers
EP0286079A2 (en) * 1987-04-09 1988-10-12 Fujitsu Limited Sensing devices utilizing magneto electric transducers
EP0286079A3 (en) * 1987-04-09 1990-08-16 Fujitsu Limited Sensing devices utilizing magneto electric transducers
US5049809A (en) * 1987-04-09 1991-09-17 Fujitsu Limited Sensing device utilizing magneto electric transducers

Also Published As

Publication number Publication date
GB2004117B (en) 1982-05-26

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee