GB2002651A - An apparatus for making a single crystal of iii-v compound semiconductive material - Google Patents

An apparatus for making a single crystal of iii-v compound semiconductive material

Info

Publication number
GB2002651A
GB2002651A GB7829866A GB7829866A GB2002651A GB 2002651 A GB2002651 A GB 2002651A GB 7829866 A GB7829866 A GB 7829866A GB 7829866 A GB7829866 A GB 7829866A GB 2002651 A GB2002651 A GB 2002651A
Authority
GB
United Kingdom
Prior art keywords
iii
silicon nitride
single crystal
semiconductive material
floating member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7829866A
Other versions
GB2002651B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8355777A external-priority patent/JPS5418816A/en
Priority claimed from JP52105771A external-priority patent/JPS6024078B2/en
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2002651A publication Critical patent/GB2002651A/en
Application granted granted Critical
Publication of GB2002651B publication Critical patent/GB2002651B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

An apparatus includes a sealed vessel, a crucible received in the sealed vessel to hold a molten liquid of III-V compound semiconductive material, and floating member having an opening for defining the cross sectional outline of a single crystal while being grown and floating on the molten liquid. The floating member is made from a sintered body consisting essentially of at least one of oxides of yttrium and the lanthanum series elements, alumina and silicon nitride each in a prescribed amount. Alternatively, the floating member may be made from a sintered body of a mixture of silicon nitride and an additive, at least part of the additive being present as a crystallized phase in the sintered silicon nitride structure. <IMAGE>
GB7829866A 1977-07-14 1978-07-14 Apparatus for making a single crystal of iii-v compound semiconductive material Expired GB2002651B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8355777A JPS5418816A (en) 1977-07-14 1977-07-14 Sintered members having good corrosionn resistance to gallium phosphide and gallium arsenide
JP52105771A JPS6024078B2 (en) 1977-09-05 1977-09-05 Manufacturing equipment for Group 3-5 compound semiconductor single crystals

Publications (2)

Publication Number Publication Date
GB2002651A true GB2002651A (en) 1979-02-28
GB2002651B GB2002651B (en) 1982-03-03

Family

ID=26424592

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7829866A Expired GB2002651B (en) 1977-07-14 1978-07-14 Apparatus for making a single crystal of iii-v compound semiconductive material

Country Status (2)

Country Link
DE (1) DE2830695C3 (en)
GB (1) GB2002651B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539173A (en) * 1983-03-17 1985-09-03 Commissariat A L'energie Atomique Process for preparing plates of a metallic or semimetallic material from a liquid mass
CN112663140A (en) * 2020-12-07 2021-04-16 山东大学 Mold device for preparing quaternary halide crystal and preparation method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1524521A (en) * 1974-10-16 1978-09-13 Metals Research Ltd Growing of crystals

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539173A (en) * 1983-03-17 1985-09-03 Commissariat A L'energie Atomique Process for preparing plates of a metallic or semimetallic material from a liquid mass
CN112663140A (en) * 2020-12-07 2021-04-16 山东大学 Mold device for preparing quaternary halide crystal and preparation method

Also Published As

Publication number Publication date
DE2830695B2 (en) 1981-07-30
DE2830695A1 (en) 1979-01-18
DE2830695C3 (en) 1982-05-13
GB2002651B (en) 1982-03-03

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970714