GB1595659A - Providing conductive tracks on semiconductor devices - Google Patents

Providing conductive tracks on semiconductor devices Download PDF

Info

Publication number
GB1595659A
GB1595659A GB22632/78A GB2263278A GB1595659A GB 1595659 A GB1595659 A GB 1595659A GB 22632/78 A GB22632/78 A GB 22632/78A GB 2263278 A GB2263278 A GB 2263278A GB 1595659 A GB1595659 A GB 1595659A
Authority
GB
United Kingdom
Prior art keywords
aluminium
tiba
reaction chamber
conductive tracks
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22632/78A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB22632/78A priority Critical patent/GB1595659A/en
Priority to IT22733/79A priority patent/IT1192728B/it
Priority to DE19792920384 priority patent/DE2920384A1/de
Priority to ES480925A priority patent/ES480925A1/es
Priority to JP6488479A priority patent/JPS54154291A/ja
Priority to FR7913340A priority patent/FR2426745A1/fr
Publication of GB1595659A publication Critical patent/GB1595659A/en
Priority to US06/314,944 priority patent/US4460618A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
GB22632/78A 1978-05-25 1978-05-25 Providing conductive tracks on semiconductor devices Expired GB1595659A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB22632/78A GB1595659A (en) 1978-05-25 1978-05-25 Providing conductive tracks on semiconductor devices
IT22733/79A IT1192728B (it) 1978-05-25 1979-05-17 Deposizione di piste conduttrici su dispositivi semiconduttori
DE19792920384 DE2920384A1 (de) 1978-05-25 1979-05-19 Verfahren zur herstellung von beschichtungen und leitbahnen aus aluminium
ES480925A ES480925A1 (es) 1978-05-25 1979-05-25 Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor.
JP6488479A JPS54154291A (en) 1978-05-25 1979-05-25 Method of forming aliminum conductor path
FR7913340A FR2426745A1 (fr) 1978-05-25 1979-05-25 Procede de revetement metallique par depot sous forme de vapeurs, pour la formation de trajets conducteurs sur un corps semi-conducteur
US06/314,944 US4460618A (en) 1978-05-25 1981-10-26 Aluminum deposition on semiconductor bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22632/78A GB1595659A (en) 1978-05-25 1978-05-25 Providing conductive tracks on semiconductor devices

Publications (1)

Publication Number Publication Date
GB1595659A true GB1595659A (en) 1981-08-12

Family

ID=10182578

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22632/78A Expired GB1595659A (en) 1978-05-25 1978-05-25 Providing conductive tracks on semiconductor devices

Country Status (6)

Country Link
US (1) US4460618A (fr)
JP (1) JPS54154291A (fr)
ES (1) ES480925A1 (fr)
FR (1) FR2426745A1 (fr)
GB (1) GB1595659A (fr)
IT (1) IT1192728B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716050A (en) * 1985-05-03 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories Chemical vapor deposition of aluminum on an activated surface

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5985857A (ja) * 1982-11-08 1984-05-17 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
US4585672A (en) * 1983-03-21 1986-04-29 Syracuse University Hydrogen charged thin film conductor
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
JPS61272379A (ja) * 1985-05-27 1986-12-02 Fujitsu Ltd アルミニウムのｃｖｄ方法
JPS6211227A (ja) * 1985-07-09 1987-01-20 Fujitsu Ltd 半導体装置の製造方法
JP2559703B2 (ja) * 1986-04-11 1996-12-04 富士通株式会社 配線膜のエピタキシヤル成長方法
US4839715A (en) * 1987-08-20 1989-06-13 International Business Machines Corporation Chip contacts without oxide discontinuities
US4913789A (en) * 1988-04-18 1990-04-03 Aung David K Sputter etching and coating process
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JPH03114266A (ja) * 1990-09-13 1991-05-15 Semiconductor Energy Lab Co Ltd アルミニューム被膜
US5149596A (en) * 1990-10-05 1992-09-22 The United States Of America As Represented By The United States Department Of Energy Vapor deposition of thin films
JPH04221822A (ja) * 1990-12-21 1992-08-12 Kazuo Tsubouchi 堆積膜形成法
JP3048749B2 (ja) * 1992-04-28 2000-06-05 キヤノン株式会社 薄膜形成方法
US5995396A (en) * 1997-12-16 1999-11-30 Lucent Technologies Inc. Hybrid standby power system, method of operation thereof and telecommunications installation employing the same
US5985375A (en) * 1998-09-03 1999-11-16 Micron Technology, Inc. Method for pulsed-plasma enhanced vapor deposition
US8796851B2 (en) 2012-01-05 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding pad and method of making same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2867546A (en) * 1956-02-08 1959-01-06 Ohio Commw Eng Co Gas plating of aluminum using aluminum trilsobutyl
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
DE1267054B (de) * 1958-09-10 1968-04-25 Union Carbide Corp Gasplattierungsverfahren zur Erzeugung von Aluminiumueberzuegen
US2990295A (en) * 1958-11-07 1961-06-27 Union Carbide Corp Deposition of aluminum
US2929739A (en) * 1958-11-07 1960-03-22 Union Carbide Corp Aluminum plating
US3041197A (en) * 1959-06-01 1962-06-26 Berger Carl Coating surfaces with aluminum
DE1235106B (de) * 1960-02-29 1967-02-23 Union Carbide Corp Verfahren zur Gasplattierung von Aluminium auf erhitzte Gegenstaende
US3188230A (en) * 1961-03-16 1965-06-08 Alloyd Corp Vapor deposition process and device
US3158499A (en) * 1961-07-07 1964-11-24 Union Carbide Corp Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
US3282243A (en) * 1965-09-08 1966-11-01 Ethyl Corp Movable means comprising vapor-plating nozzle and exhaust
US3402067A (en) * 1965-09-24 1968-09-17 Engelhard Ind Inc Method for depositing aluminum film
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
BE758258A (fr) * 1969-11-01 1971-04-01 Sumitomo Chemical Co Procede de depot d'aluminium
GB1352619A (en) * 1970-08-21 1974-05-08 Motorola Inc Thin film resistor
DE2242875A1 (de) * 1971-10-13 1973-04-19 Ibm Metallisierungs- und kontaktanordnung bei monolithischen halbleiteranordnungen und verfahren zu deren herstellung
JPS4911540A (fr) * 1972-05-31 1974-02-01
JPS4911541A (fr) * 1972-06-01 1974-02-01
JPS5443872B2 (fr) * 1972-09-18 1979-12-22
DE2309506A1 (de) * 1973-02-26 1974-08-29 Siemens Ag Verfahren zur herstellung von anschluss- und kontaktflaechen durch metallabscheidung aus der gasphase
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
JPS5810988B2 (ja) * 1975-05-23 1983-02-28 株式会社日立製作所 キソウカガクハンノウホウシキ
US4031274A (en) * 1975-10-14 1977-06-21 General Electric Company Method for coating cavities with metal
LU74666A1 (fr) * 1976-03-29 1977-10-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716050A (en) * 1985-05-03 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories Chemical vapor deposition of aluminum on an activated surface

Also Published As

Publication number Publication date
ES480925A1 (es) 1980-01-01
FR2426745B1 (fr) 1983-08-26
IT7922733A0 (it) 1979-05-17
FR2426745A1 (fr) 1979-12-21
JPS54154291A (en) 1979-12-05
IT1192728B (it) 1988-05-04
JPH0234166B2 (fr) 1990-08-01
US4460618A (en) 1984-07-17

Similar Documents

Publication Publication Date Title
GB1595659A (en) Providing conductive tracks on semiconductor devices
EP0068738B1 (fr) Installation de métallisation
KR930011414B1 (ko) 질화규소막의 형성방법
US5443686A (en) Plasma CVD apparatus and processes
US4699805A (en) Process and apparatus for the low pressure chemical vapor deposition of thin films
US5728629A (en) Process for preventing deposition on inner surfaces of CVD reactor
US4328261A (en) Metallizing semiconductor devices
US20020106909A1 (en) Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method
US4294871A (en) Method for depositing a layer on the inside of cavities of a work piece
GB2041983A (en) Metallising semiconductor devices
KR20010039780A (ko) 발열체 ｃｖｄ 장치 및 부착막의 제거방법
KR900008970B1 (ko) 인규산 글라스(psg) 코팅 형성 공정
US5750195A (en) Deposition of diamond on oxidizable material
KR20110047966A (ko) 반도체 장치의 제조 방법 및 기판 처리 장치
US4433012A (en) Process for the pyrolytic deposition of aluminum from TIBA
US5468688A (en) Process for the low temperature creation of nitride films on semiconductors
US4895737A (en) Metal-organic chemical vapor deposition
KR20180125099A (ko) 화학기상증착 저 저항 실리콘 카바이드 벌크 제조 장치
GB1594399A (en) Metal deposition
US6531415B1 (en) Silicon nitride furnace tube low temperature cycle purge for attenuated particle formation
JP2012136743A (ja) 基板処理装置
JP4540144B2 (ja) Ｃｖｄ法及び真空処理装置
JP3098093B2 (ja) 化学気相成長装置
GB1595660A (en) Corrosion protection of metal surfaces
GB1599369A (en) Deposition techniques

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940525