GB1592480A - Charge transfer devices - Google Patents
Charge transfer devices Download PDFInfo
- Publication number
- GB1592480A GB1592480A GB5023577A GB5023577A GB1592480A GB 1592480 A GB1592480 A GB 1592480A GB 5023577 A GB5023577 A GB 5023577A GB 5023577 A GB5023577 A GB 5023577A GB 1592480 A GB1592480 A GB 1592480A
- Authority
- GB
- United Kingdom
- Prior art keywords
- charge
- input
- packets
- electrodes
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 238000011067 equilibration Methods 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims description 2
- 238000012886 linear function Methods 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74848576A | 1976-12-08 | 1976-12-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1592480A true GB1592480A (en) | 1981-07-08 |
Family
ID=25009646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5023577A Expired GB1592480A (en) | 1976-12-08 | 1977-12-02 | Charge transfer devices |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5371578A (ja) |
| BE (1) | BE861538A (ja) |
| CA (1) | CA1105139A (ja) |
| DE (1) | DE2753677A1 (ja) |
| ES (1) | ES464864A1 (ja) |
| FR (1) | FR2373856A1 (ja) |
| GB (1) | GB1592480A (ja) |
| NL (1) | NL7713544A (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5529191A (en) * | 1978-08-24 | 1980-03-01 | Nec Corp | Charge coupld element |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE35684B1 (en) * | 1970-10-22 | 1976-04-28 | Western Electric Co | Improvements in or relating to charge transfer devices |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| JPS5214944B1 (ja) * | 1971-06-04 | 1977-04-25 | ||
| US3819953A (en) * | 1972-11-22 | 1974-06-25 | Gen Electric | Differential bucket-brigade circuit |
| US3877056A (en) * | 1973-01-02 | 1975-04-08 | Texas Instruments Inc | Charge transfer device signal processing system |
| US3876952A (en) * | 1973-05-02 | 1975-04-08 | Rca Corp | Signal processing circuits for charge-transfer, image-sensing arrays |
| US3937985A (en) * | 1974-06-05 | 1976-02-10 | Bell Telephone Laboratories, Incorporated | Apparatus and method for regenerating charge |
| US3986059A (en) * | 1975-04-18 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Electrically pulsed charge regenerator for semiconductor charge coupled devices |
| US3969634A (en) * | 1975-07-31 | 1976-07-13 | Hughes Aircraft Company | Bucket background subtraction circuit for charge-coupled devices |
| US4075514A (en) * | 1976-12-06 | 1978-02-21 | Bell Telephone Laboratories, Incorporated | Sensing circuit for semiconductor charge transfer devices |
-
1977
- 1977-11-09 CA CA290,564A patent/CA1105139A/en not_active Expired
- 1977-12-02 FR FR7736289A patent/FR2373856A1/fr active Granted
- 1977-12-02 GB GB5023577A patent/GB1592480A/en not_active Expired
- 1977-12-02 DE DE19772753677 patent/DE2753677A1/de not_active Withdrawn
- 1977-12-06 BE BE183195A patent/BE861538A/xx not_active IP Right Cessation
- 1977-12-07 ES ES464864A patent/ES464864A1/es not_active Expired
- 1977-12-07 NL NL7713544A patent/NL7713544A/xx not_active Application Discontinuation
- 1977-12-08 JP JP14666877A patent/JPS5371578A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| ES464864A1 (es) | 1978-09-01 |
| FR2373856A1 (fr) | 1978-07-07 |
| DE2753677A1 (de) | 1978-06-15 |
| JPS5371578A (en) | 1978-06-26 |
| CA1105139A (en) | 1981-07-14 |
| NL7713544A (nl) | 1978-06-12 |
| FR2373856B1 (ja) | 1983-02-04 |
| BE861538A (fr) | 1978-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4210825A (en) | Linear differential charge splitting input for charge coupled devices | |
| EP0080732A2 (en) | Semiconductor analog switch circuit using MOS transistors | |
| US4156818A (en) | Operating circuitry for semiconductor charge coupled devices | |
| US4540901A (en) | Image-sensing charge-coupled device with both high-speed and low-speed read-outs | |
| US4159430A (en) | Charge transfer device for processing video-frequency signals | |
| US4071775A (en) | Charge coupled differential amplifier for transversal filter | |
| KR970009242B1 (ko) | 스위치형 캐패시터 회로망 | |
| US4132903A (en) | CCD output circuit using thin film transistor | |
| US4649554A (en) | Charge transfer device having a subdivided channel output region | |
| GB1592480A (en) | Charge transfer devices | |
| CA1111560A (en) | Sensing circuit for semiconductor charge transfer devices | |
| US4005377A (en) | Conductivity coupled split capacitor signal processing device and apparatus therefor | |
| Fossum et al. | A linear and compact charge-coupled charge packet differencer/replicator | |
| GB1566947A (en) | Signal subtraction systems | |
| EP0161023A1 (en) | Charge-coupled semiconductor device with dynamic control | |
| US3935477A (en) | Analog inverter for use in charge transfer apparatus | |
| JPS6112408B2 (ja) | ||
| Sequin et al. | Self-contained charge-coupled split-electrode filters using a novel sensing technique | |
| DE2844248A1 (de) | Ladungsuebertragungsanordnung | |
| US4350902A (en) | Input stage for a monolithically integrated charge transfer device which generates two complementary charge packets | |
| US4521896A (en) | Simultaneous sampling dual transfer channel charge coupled device | |
| GB1565338A (en) | Transversal filter | |
| US4293832A (en) | Transversal charge transfer filter | |
| US5146480A (en) | Sampling an analog signal voltage using fill and spill input in charge transfer device | |
| Tompsett et al. | Measurements of transfer inefficiency of 250-element undercut-isolated charge coupled devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |