CA1105139A - Charge transfer device having linear differential charge-splitting input - Google Patents
Charge transfer device having linear differential charge-splitting inputInfo
- Publication number
- CA1105139A CA1105139A CA290,564A CA290564A CA1105139A CA 1105139 A CA1105139 A CA 1105139A CA 290564 A CA290564 A CA 290564A CA 1105139 A CA1105139 A CA 1105139A
- Authority
- CA
- Canada
- Prior art keywords
- charge
- input
- packets
- transfer device
- accordance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 13
- 238000011067 equilibration Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
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- 239000007943 implant Substances 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJJWOSAXNHWBPR-HUBLWGQQSA-N 5-[(3as,4s,6ar)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]-n-(6-hydrazinyl-6-oxohexyl)pentanamide Chemical compound N1C(=O)N[C@@H]2[C@H](CCCCC(=O)NCCCCCC(=O)NN)SC[C@@H]21 IJJWOSAXNHWBPR-HUBLWGQQSA-N 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- SYOKIDBDQMKNDQ-XWTIBIIYSA-N vildagliptin Chemical compound C1C(O)(C2)CC(C3)CC1CC32NCC(=O)N1CCC[C@H]1C#N SYOKIDBDQMKNDQ-XWTIBIIYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74848576A | 1976-12-08 | 1976-12-08 | |
| US748,485 | 1985-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1105139A true CA1105139A (en) | 1981-07-14 |
Family
ID=25009646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA290,564A Expired CA1105139A (en) | 1976-12-08 | 1977-11-09 | Charge transfer device having linear differential charge-splitting input |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5371578A (ja) |
| BE (1) | BE861538A (ja) |
| CA (1) | CA1105139A (ja) |
| DE (1) | DE2753677A1 (ja) |
| ES (1) | ES464864A1 (ja) |
| FR (1) | FR2373856A1 (ja) |
| GB (1) | GB1592480A (ja) |
| NL (1) | NL7713544A (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5529191A (en) * | 1978-08-24 | 1980-03-01 | Nec Corp | Charge coupld element |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE35684B1 (en) * | 1970-10-22 | 1976-04-28 | Western Electric Co | Improvements in or relating to charge transfer devices |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| JPS5214944B1 (ja) * | 1971-06-04 | 1977-04-25 | ||
| US3819953A (en) * | 1972-11-22 | 1974-06-25 | Gen Electric | Differential bucket-brigade circuit |
| US3877056A (en) * | 1973-01-02 | 1975-04-08 | Texas Instruments Inc | Charge transfer device signal processing system |
| US3876952A (en) * | 1973-05-02 | 1975-04-08 | Rca Corp | Signal processing circuits for charge-transfer, image-sensing arrays |
| US3937985A (en) * | 1974-06-05 | 1976-02-10 | Bell Telephone Laboratories, Incorporated | Apparatus and method for regenerating charge |
| US3986059A (en) * | 1975-04-18 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Electrically pulsed charge regenerator for semiconductor charge coupled devices |
| US3969634A (en) * | 1975-07-31 | 1976-07-13 | Hughes Aircraft Company | Bucket background subtraction circuit for charge-coupled devices |
| US4075514A (en) * | 1976-12-06 | 1978-02-21 | Bell Telephone Laboratories, Incorporated | Sensing circuit for semiconductor charge transfer devices |
-
1977
- 1977-11-09 CA CA290,564A patent/CA1105139A/en not_active Expired
- 1977-12-02 GB GB5023577A patent/GB1592480A/en not_active Expired
- 1977-12-02 FR FR7736289A patent/FR2373856A1/fr active Granted
- 1977-12-02 DE DE19772753677 patent/DE2753677A1/de not_active Withdrawn
- 1977-12-06 BE BE183195A patent/BE861538A/xx not_active IP Right Cessation
- 1977-12-07 ES ES464864A patent/ES464864A1/es not_active Expired
- 1977-12-07 NL NL7713544A patent/NL7713544A/xx not_active Application Discontinuation
- 1977-12-08 JP JP14666877A patent/JPS5371578A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2373856A1 (fr) | 1978-07-07 |
| GB1592480A (en) | 1981-07-08 |
| DE2753677A1 (de) | 1978-06-15 |
| BE861538A (fr) | 1978-03-31 |
| ES464864A1 (es) | 1978-09-01 |
| NL7713544A (nl) | 1978-06-12 |
| JPS5371578A (en) | 1978-06-26 |
| FR2373856B1 (ja) | 1983-02-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |