GB1584176A - Voltage sensing circuit of differential input type - Google Patents

Voltage sensing circuit of differential input type Download PDF

Info

Publication number
GB1584176A
GB1584176A GB35433/77A GB3543377A GB1584176A GB 1584176 A GB1584176 A GB 1584176A GB 35433/77 A GB35433/77 A GB 35433/77A GB 3543377 A GB3543377 A GB 3543377A GB 1584176 A GB1584176 A GB 1584176A
Authority
GB
United Kingdom
Prior art keywords
transistor
data
sensing circuit
voltage sensing
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35433/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1584176A publication Critical patent/GB1584176A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
GB35433/77A 1976-09-30 1977-08-24 Voltage sensing circuit of differential input type Expired GB1584176A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11754776A JPS5342633A (en) 1976-09-30 1976-09-30 Voltage sense circuit of semiconductor memory device

Publications (1)

Publication Number Publication Date
GB1584176A true GB1584176A (en) 1981-02-11

Family

ID=14714497

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35433/77A Expired GB1584176A (en) 1976-09-30 1977-08-24 Voltage sensing circuit of differential input type

Country Status (3)

Country Link
US (1) US4136292A (cg-RX-API-DMAC7.html)
JP (1) JPS5342633A (cg-RX-API-DMAC7.html)
GB (1) GB1584176A (cg-RX-API-DMAC7.html)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144232A (en) * 1977-04-28 1978-12-15 Toshiba Corp Sensor circuit for multi-value signal charge transfer device
US4169233A (en) * 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
US4247791A (en) * 1978-04-03 1981-01-27 Rockwell International Corporation CMOS Memory sense amplifier
JPS5525858A (en) * 1978-08-11 1980-02-23 Nec Corp Memory unit
JPS5824874B2 (ja) * 1979-02-07 1983-05-24 富士通株式会社 センス回路
US4200917A (en) * 1979-03-12 1980-04-29 Motorola, Inc. Quiet column decoder
JPS6032912B2 (ja) * 1979-09-13 1985-07-31 株式会社東芝 Ｃｍｏｓセンスアンプ回路
US4270190A (en) * 1979-12-27 1981-05-26 Rca Corporation Small signal memory system with reference signal
JPS5838873B2 (ja) * 1980-10-15 1983-08-25 富士通株式会社 センス回路
US4413329A (en) * 1980-12-24 1983-11-01 International Business Machines Corporation Dynamic memory cell
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
USRE34060E (en) * 1981-06-01 1992-09-08 Hitachi, Ltd. High speed semiconductor memory device having a high gain sense amplifier
JPS5840918A (ja) * 1981-09-03 1983-03-10 Nec Corp 電圧比較回路
JPS58168310A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 出力回路
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
JPH0648595B2 (ja) * 1982-08-20 1994-06-22 株式会社東芝 半導体記憶装置のセンスアンプ
US4604533A (en) * 1982-12-28 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Sense amplifier
US4494020A (en) * 1983-04-13 1985-01-15 Tokyo Shibaura Denki Kabushiki Kaisha High sensitivity sense amplifier using different threshold valued MOS devices
JPS60211693A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd Ｍｏｓ増幅回路
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPS62192997A (ja) * 1986-02-20 1987-08-24 Toshiba Corp カレントミラ−型センスアンプ
US4716320A (en) * 1986-06-20 1987-12-29 Texas Instruments Incorporated CMOS sense amplifier with isolated sensing nodes
US4813023A (en) * 1986-10-21 1989-03-14 Brooktree Corporation System employing negative feedback for decreasing the response time of a cell
EP0303815B1 (de) * 1987-08-18 1993-09-22 Siemens Aktiengesellschaft Leseverstärker für statische Speicher in CMOS-Technologie
US4800301A (en) * 1987-12-02 1989-01-24 American Telephone And Telegraph Company Method and apparatus for sensing signals
JPH04214297A (ja) * 1990-12-13 1992-08-05 Mitsubishi Electric Corp 増幅回路
FR2673295B1 (fr) * 1991-02-21 1994-10-28 Sgs Thomson Microelectronics Sa Dispositif de detection de l'etat logique d'un composant dont l'impedance varie suivant cet etat.
JPH07249291A (ja) * 1994-03-09 1995-09-26 Nec Corp アドレス生成デコード装置
US6175279B1 (en) * 1997-12-09 2001-01-16 Qualcomm Incorporated Amplifier with adjustable bias current
JP4280822B2 (ja) * 2004-02-18 2009-06-17 国立大学法人静岡大学 光飛行時間型距離センサ
US9048830B2 (en) * 2009-03-02 2015-06-02 David Reynolds Circuits for soft logical functions
US11296693B1 (en) 2021-01-27 2022-04-05 Micron Technology, Inc. Apparatuses and methods for compensating for crosstalk noise at input receiver circuits

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532044B2 (cg-RX-API-DMAC7.html) * 1972-09-18 1980-08-22
JPS50122134A (cg-RX-API-DMAC7.html) * 1974-03-06 1975-09-25
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
US4050030A (en) * 1975-02-12 1977-09-20 National Semiconductor Corporation Offset adjustment circuit
US3953839A (en) * 1975-04-10 1976-04-27 International Business Machines Corporation Bit circuitry for enhance-deplete ram
US4003034A (en) * 1975-05-23 1977-01-11 Fairchild Camera And Instrument Corporation Sense amplifier circuit for a random access memory

Also Published As

Publication number Publication date
JPS5342633A (en) 1978-04-18
US4136292A (en) 1979-01-23
JPS5721790B2 (cg-RX-API-DMAC7.html) 1982-05-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19970823