GB1568586A - Field controlled thyristor - Google Patents
Field controlled thyristor Download PDFInfo
- Publication number
- GB1568586A GB1568586A GB24554/77A GB2455477A GB1568586A GB 1568586 A GB1568586 A GB 1568586A GB 24554/77 A GB24554/77 A GB 24554/77A GB 2455477 A GB2455477 A GB 2455477A GB 1568586 A GB1568586 A GB 1568586A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- grid
- cathode
- adjacent
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/697,984 US4060821A (en) | 1976-06-21 | 1976-06-21 | Field controlled thyristor with buried grid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1568586A true GB1568586A (en) | 1980-06-04 |
Family
ID=24803423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24554/77A Expired GB1568586A (en) | 1976-06-21 | 1977-06-13 | Field controlled thyristor |
Country Status (7)
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542077A (en) * | 1977-06-08 | 1979-01-09 | Hitachi Ltd | Semiconductor switching element |
| JPS5428579A (en) * | 1977-08-05 | 1979-03-03 | Hitachi Ltd | Field effect switching element |
| JPS54112157A (en) | 1978-02-23 | 1979-09-01 | Hitachi Ltd | Control circuit for field effect thyristor |
| JPS6036708B2 (ja) * | 1978-02-24 | 1985-08-22 | 株式会社日立製作所 | 電界効果形サイリスタのゲ−ト回路 |
| JPS5936832B2 (ja) * | 1978-03-14 | 1984-09-06 | 株式会社日立製作所 | 半導体スイッチング素子 |
| JPS6046551B2 (ja) * | 1978-08-07 | 1985-10-16 | 株式会社日立製作所 | 半導体スイツチング素子およびその製法 |
| US4514747A (en) * | 1978-08-07 | 1985-04-30 | Hitachi, Ltd. | Field controlled thyristor with double-diffused source region |
| DE2953413A1 (de) * | 1978-12-20 | 1980-12-04 | Western Electric Co | Control circuitry for gated diode switches |
| US4586073A (en) * | 1978-12-20 | 1986-04-29 | At&T Bell Laboratories | High voltage junction solid-state switch |
| HU180115B (en) * | 1978-12-20 | 1983-02-28 | Western Electric Co | Circuit arrangement for controlling switches with controlled diodes |
| DE2953387A1 (de) * | 1978-12-20 | 1980-12-11 | Western Electric Co | High voltage dielectrically isolated solid-state switch |
| US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
| US4587545A (en) * | 1978-12-20 | 1986-05-06 | At&T Bell Laboratories | High voltage dielectrically isolated remote gate solid-state switch |
| US4602268A (en) * | 1978-12-20 | 1986-07-22 | At&T Bell Laboratories | High voltage dielectrically isolated dual gate solid-state switch |
| HU181029B (en) * | 1978-12-20 | 1983-05-30 | Western Electric Co | Switching circuit containing controlled dioda switch |
| EP0029932B1 (en) * | 1979-11-16 | 1984-08-15 | General Electric Company | Asymmetrical field controlled thyristor |
| US4587656A (en) * | 1979-12-28 | 1986-05-06 | At&T Bell Laboratories | High voltage solid-state switch |
| US4656366A (en) * | 1979-12-28 | 1987-04-07 | American Telephone And Telegraph Company At&T Bell Laboratories | Control circuitry using two branch circuits for high voltage solid-state switches |
| US4250409A (en) * | 1979-12-28 | 1981-02-10 | Bell Telephone Laboratories, Incorporated | Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches |
| JPS5788771A (en) * | 1980-11-21 | 1982-06-02 | Semiconductor Res Found | Electrostatic induction thyristor |
| EP0075589B1 (en) * | 1981-03-27 | 1987-01-14 | Western Electric Company, Incorporated | Gated diode switch |
| US4466173A (en) * | 1981-11-23 | 1984-08-21 | General Electric Company | Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques |
| JPS5885525U (ja) * | 1981-12-04 | 1983-06-10 | 株式会社をくだ屋技研 | 運搬作業車の走行装置 |
| US4835586A (en) * | 1987-09-21 | 1989-05-30 | Siliconix Incorporated | Dual-gate high density fet |
| GB2230136B (en) * | 1989-03-28 | 1993-02-10 | Matsushita Electric Works Ltd | Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby |
| US6011279A (en) * | 1997-04-30 | 2000-01-04 | Cree Research, Inc. | Silicon carbide field controlled bipolar switch |
| SE9704149D0 (sv) * | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1361920A (fr) * | 1963-02-19 | 1964-05-29 | Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance | |
| US3439192A (en) * | 1964-05-27 | 1969-04-15 | Jeumont Schneider | Control circuits for field-effect bipolar switching devices |
| US3363153A (en) * | 1965-06-01 | 1968-01-09 | Gen Telephone & Elect | Solid state triode having gate electrode therein subtending a portion of the source electrode |
| CH436492A (de) * | 1965-10-21 | 1967-05-31 | Bbc Brown Boveri & Cie | Steuerbare Halbleitervorrichtung mit mehreren Schichten |
| US3398337A (en) * | 1966-04-25 | 1968-08-20 | John J. So | Short-channel field-effect transistor having an impurity gradient in the channel incrasing from a midpoint to each end |
| FR1497548A (fr) * | 1966-07-22 | 1967-10-13 | Jeumont Schneider | Dispositif semi-conducteur bistable pour courants forts |
| US3497777A (en) * | 1967-06-13 | 1970-02-24 | Stanislas Teszner | Multichannel field-effect semi-conductor device |
| US3841917A (en) * | 1971-09-06 | 1974-10-15 | Philips Nv | Methods of manufacturing semiconductor devices |
| DE2233786C3 (de) * | 1972-01-24 | 1982-03-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor mit erhöhter Ein- und Durchschaltgeschwindigkeit |
| FR2174774B1 (US06229276-20010508-P00081.png) * | 1972-03-10 | 1977-01-14 | Teszner Stanislas | |
| FR2299727A1 (fr) * | 1975-01-28 | 1976-08-27 | Alsthom Cgee | Thyristor a caracteristiques de commutation ameliorees |
-
1976
- 1976-06-21 US US05/697,984 patent/US4060821A/en not_active Expired - Lifetime
-
1977
- 1977-06-02 NL NL7706095A patent/NL7706095A/xx not_active Application Discontinuation
- 1977-06-13 GB GB24554/77A patent/GB1568586A/en not_active Expired
- 1977-06-16 FR FR7718466A patent/FR2356278A1/fr active Granted
- 1977-06-18 DE DE2727405A patent/DE2727405C2/de not_active Expired
- 1977-06-21 JP JP7290277A patent/JPS538578A/ja active Granted
- 1977-06-21 SE SE7707188A patent/SE428406B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2727405C2 (de) | 1982-09-02 |
| DE2727405A1 (de) | 1977-12-29 |
| FR2356278A1 (fr) | 1978-01-20 |
| FR2356278B1 (US06229276-20010508-P00081.png) | 1983-05-27 |
| SE7707188L (sv) | 1977-12-22 |
| JPS538578A (en) | 1978-01-26 |
| JPS5643622B2 (US06229276-20010508-P00081.png) | 1981-10-14 |
| US4060821A (en) | 1977-11-29 |
| NL7706095A (nl) | 1977-12-23 |
| SE428406B (sv) | 1983-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4060821A (en) | Field controlled thyristor with buried grid | |
| EP0134456B1 (en) | Pinch rectifier | |
| US4982260A (en) | Power rectifier with trenches | |
| US4037245A (en) | Electric field controlled diode with a current controlling surface grid | |
| US5702961A (en) | Methods of forming insulated gate bipolar transistors having built-in freewheeling diodes and transistors formed thereby | |
| US4969028A (en) | Gate enhanced rectifier | |
| US4967243A (en) | Power transistor structure with high speed integral antiparallel Schottky diode | |
| US6037632A (en) | Semiconductor device | |
| US4656493A (en) | Bidirectional, high-speed power MOSFET devices with deep level recombination centers in base region | |
| US4514747A (en) | Field controlled thyristor with double-diffused source region | |
| JPH0758332A (ja) | 半導体装置 | |
| JPH037149B2 (US06229276-20010508-P00081.png) | ||
| IE52758B1 (en) | Gate enhanced rectifier | |
| US6011279A (en) | Silicon carbide field controlled bipolar switch | |
| US4782379A (en) | Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device | |
| US3280386A (en) | Semiconductor a.c. switch device | |
| US4132996A (en) | Electric field-controlled semiconductor device | |
| US4086611A (en) | Static induction type thyristor | |
| US3855611A (en) | Thyristor devices | |
| US4171995A (en) | Epitaxial deposition process for producing an electrostatic induction type thyristor | |
| US4089020A (en) | High power semiconductor diode | |
| US5079607A (en) | Mos type semiconductor device | |
| US4622568A (en) | Planar field-shaped bidirectional power FET | |
| EP0014080B1 (en) | A three-terminal semiconductor switch device | |
| EP0454201B1 (en) | A semiconductor device comprising a thyristor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |