GB1533615A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1533615A GB1533615A GB7413/76A GB741376A GB1533615A GB 1533615 A GB1533615 A GB 1533615A GB 7413/76 A GB7413/76 A GB 7413/76A GB 741376 A GB741376 A GB 741376A GB 1533615 A GB1533615 A GB 1533615A
- Authority
- GB
- United Kingdom
- Prior art keywords
- base
- zone
- zones
- groove
- phototransistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7506360A FR2302594A1 (fr) | 1975-02-28 | 1975-02-28 | Dispositif semi-conducteur integre |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1533615A true GB1533615A (en) | 1978-11-29 |
Family
ID=9151921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7413/76A Expired GB1533615A (en) | 1975-02-28 | 1976-02-25 | Semiconductor device |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4363963A (en) | 1979-03-08 | 1982-12-14 | Nippon Hoso Kyokai | Solid state photo-electric converting device and solid state imaging apparatus employing it |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4167748A (en) * | 1978-07-03 | 1979-09-11 | Bell Telephone Laboratories, Incorporated | High voltage monolithic transistor circuit |
| US4329705A (en) * | 1979-05-21 | 1982-05-11 | Exxon Research & Engineering Co. | VMOS/Bipolar power switching device |
| NL8005995A (nl) * | 1980-11-03 | 1982-06-01 | Philips Nv | Halfgeleiderinrichting. |
| US4412142A (en) * | 1980-12-24 | 1983-10-25 | General Electric Company | Integrated circuit incorporating low voltage and high voltage semiconductor devices |
| JPS58184855U (ja) * | 1982-06-01 | 1983-12-08 | シャープ株式会社 | ホトトランジスタ |
| DE8535109U1 (de) * | 1985-12-13 | 1989-05-11 | Heimann Gmbh, 6200 Wiesbaden | Kontaktbildsensorzeile |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1035727A (en) * | 1965-12-22 | 1966-07-13 | Standard Telephones Cables Ltd | Semiconductor devices |
| DE1764455C3 (de) * | 1968-06-08 | 1980-02-07 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte Darlington-Transistorschaltung |
| DE2206354A1 (de) * | 1971-02-11 | 1972-10-05 | Motorola Inc | Dual-verbundene Mesa-Transistoren |
| US3936856A (en) * | 1974-05-28 | 1976-02-03 | International Business Machines Corporation | Space-charge-limited integrated circuit structure |
-
1975
- 1975-02-28 FR FR7506360A patent/FR2302594A1/fr active Granted
-
1976
- 1976-02-19 CA CA246,293A patent/CA1047170A/en not_active Expired
- 1976-02-23 DE DE2607194A patent/DE2607194C2/de not_active Expired
- 1976-02-23 NL NL7601784A patent/NL7601784A/xx not_active Application Discontinuation
- 1976-02-23 US US05/660,499 patent/US4078244A/en not_active Expired - Lifetime
- 1976-02-25 GB GB7413/76A patent/GB1533615A/en not_active Expired
- 1976-02-26 JP JP1949076A patent/JPS5310434B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4363963A (en) | 1979-03-08 | 1982-12-14 | Nippon Hoso Kyokai | Solid state photo-electric converting device and solid state imaging apparatus employing it |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51110289A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-09-29 |
| FR2302594B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-07-13 |
| FR2302594A1 (fr) | 1976-09-24 |
| US4078244A (en) | 1978-03-07 |
| DE2607194A1 (de) | 1976-09-09 |
| DE2607194C2 (de) | 1983-08-18 |
| JPS5310434B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-04-13 |
| CA1047170A (en) | 1979-01-23 |
| NL7601784A (nl) | 1976-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES450165A1 (es) | Dispositivo semiconductor integrado. | |
| GB1357515A (en) | Method for manufacturing an mos integrated circuit | |
| GB1488239A (en) | Semiconductor integrated circuits | |
| GB1396896A (en) | Semiconductor devices including field effect and bipolar transistors | |
| GB1529498A (en) | Transistor having integrated protection | |
| GB1391214A (en) | Seminconductor device having an integrated thermocouple | |
| GB1159937A (en) | Improvements in or relating to Semiconductor Devices. | |
| GB1441800A (en) | Integrated circuits | |
| GB1533615A (en) | Semiconductor device | |
| GB1291383A (en) | Improvements in and relating to semiconductor devices | |
| EP0310047A3 (en) | Double-diffused mos fet | |
| GB1326286A (en) | Transistors | |
| GB1372607A (en) | Semiconductor devices | |
| GB1229294A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| GB1303236A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| GB1106787A (en) | Improvements in semiconductor devices | |
| GB1246864A (en) | Transistor | |
| GB1452882A (en) | Zener diode for integrated circuits | |
| GB1450749A (en) | Semiconductor darlington circuit | |
| GB1279831A (en) | Improvements in or relating to field effect transistors | |
| GB1531811A (en) | Complementary transistors and their manufacture | |
| GB1127161A (en) | Improvements in or relating to diffused base transistors | |
| GB1496306A (en) | Semiconductor integrated circuit including an epitaxial base type vertical transistor | |
| GB1300726A (en) | Semiconductor devices | |
| GB1514291A (en) | Integrated circuit semiconductive devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19930225 |