JPS5310434B2 - - Google Patents

Info

Publication number
JPS5310434B2
JPS5310434B2 JP1949076A JP1949076A JPS5310434B2 JP S5310434 B2 JPS5310434 B2 JP S5310434B2 JP 1949076 A JP1949076 A JP 1949076A JP 1949076 A JP1949076 A JP 1949076A JP S5310434 B2 JPS5310434 B2 JP S5310434B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1949076A
Other languages
Japanese (ja)
Other versions
JPS51110289A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS51110289A publication Critical patent/JPS51110289A/ja
Publication of JPS5310434B2 publication Critical patent/JPS5310434B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/103Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
JP1949076A 1975-02-28 1976-02-26 Expired JPS5310434B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7506360A FR2302594A1 (fr) 1975-02-28 1975-02-28 Dispositif semi-conducteur integre

Publications (2)

Publication Number Publication Date
JPS51110289A JPS51110289A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-09-29
JPS5310434B2 true JPS5310434B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-04-13

Family

ID=9151921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1949076A Expired JPS5310434B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-02-28 1976-02-26

Country Status (7)

Country Link
US (1) US4078244A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5310434B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1047170A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2607194C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2302594A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1533615A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7601784A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167748A (en) * 1978-07-03 1979-09-11 Bell Telephone Laboratories, Incorporated High voltage monolithic transistor circuit
JPS5850030B2 (ja) 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US4329705A (en) * 1979-05-21 1982-05-11 Exxon Research & Engineering Co. VMOS/Bipolar power switching device
NL8005995A (nl) * 1980-11-03 1982-06-01 Philips Nv Halfgeleiderinrichting.
US4412142A (en) * 1980-12-24 1983-10-25 General Electric Company Integrated circuit incorporating low voltage and high voltage semiconductor devices
JPS58184855U (ja) * 1982-06-01 1983-12-08 シャープ株式会社 ホトトランジスタ
DE8535109U1 (de) * 1985-12-13 1989-05-11 Heimann Gmbh, 6200 Wiesbaden Kontaktbildsensorzeile

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1035727A (en) * 1965-12-22 1966-07-13 Standard Telephones Cables Ltd Semiconductor devices
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
DE2206354A1 (de) * 1971-02-11 1972-10-05 Motorola Inc Dual-verbundene Mesa-Transistoren
US3936856A (en) * 1974-05-28 1976-02-03 International Business Machines Corporation Space-charge-limited integrated circuit structure

Also Published As

Publication number Publication date
FR2302594A1 (fr) 1976-09-24
CA1047170A (en) 1979-01-23
NL7601784A (nl) 1976-08-31
GB1533615A (en) 1978-11-29
JPS51110289A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-09-29
DE2607194C2 (de) 1983-08-18
US4078244A (en) 1978-03-07
DE2607194A1 (de) 1976-09-09
FR2302594B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-07-13

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