GB1532616A - Photo-voltaic power generating means and methods - Google Patents

Photo-voltaic power generating means and methods

Info

Publication number
GB1532616A
GB1532616A GB22719/77A GB2271977A GB1532616A GB 1532616 A GB1532616 A GB 1532616A GB 22719/77 A GB22719/77 A GB 22719/77A GB 2271977 A GB2271977 A GB 2271977A GB 1532616 A GB1532616 A GB 1532616A
Authority
GB
United Kingdom
Prior art keywords
conductor
semi
transparent
electro
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22719/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MONSOLAR Inc
Original Assignee
MONSOLAR Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MONSOLAR Inc filed Critical MONSOLAR Inc
Publication of GB1532616A publication Critical patent/GB1532616A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
GB22719/77A 1976-06-08 1977-05-30 Photo-voltaic power generating means and methods Expired GB1532616A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69389076A 1976-06-08 1976-06-08

Publications (1)

Publication Number Publication Date
GB1532616A true GB1532616A (en) 1978-11-15

Family

ID=24786541

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22719/77A Expired GB1532616A (en) 1976-06-08 1977-05-30 Photo-voltaic power generating means and methods

Country Status (11)

Country Link
JP (1) JPS5310989A (de)
AU (1) AU513645B2 (de)
BE (1) BE855499A (de)
CA (1) CA1077161A (de)
DE (1) DE2726009A1 (de)
FR (1) FR2354131A1 (de)
GB (1) GB1532616A (de)
IL (1) IL52216A (de)
IT (1) IT1080884B (de)
MX (1) MX145655A (de)
NL (1) NL186611C (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253919A (en) * 1980-01-21 1981-03-03 The International Nickel Company, Inc. Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath
US4256544A (en) * 1980-04-04 1981-03-17 Bell Telephone Laboratories, Incorporated Method of making metal-chalcogenide photosensitive devices
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell
US4261802A (en) * 1980-02-21 1981-04-14 Ametek, Inc. Method of making a photovoltaic cell
US4296188A (en) * 1979-07-07 1981-10-20 Yeda Research And Development Company Ltd. Cd(Se,Te) Alloy photovoltaic materials
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2810605C2 (de) * 1978-03-11 1980-03-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrolytisches Abscheideverfahren zur Herstellung von großflächigen Halbleiterbauelementen
US4192721A (en) * 1979-04-24 1980-03-11 Baranski Andrzej S Method for producing a smooth coherent film of a metal chalconide
JPS5714574A (en) * 1980-06-27 1982-01-25 Otsuka Pharmaceut Co Ltd Carbostyril derivative
IN158650B (de) * 1981-03-16 1986-12-27 Sohio Commercial Dev Co
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4611091A (en) * 1984-12-06 1986-09-09 Atlantic Richfield Company CuInSe2 thin film solar cell with thin CdS and transparent window layer
JPS61202478A (ja) * 1985-03-05 1986-09-08 Agency Of Ind Science & Technol 光起電力素子の製造方法
US5319377A (en) * 1992-04-07 1994-06-07 Hughes Aircraft Company Wideband arrayable planar radiator
DE29706857U1 (de) * 1997-04-16 1997-12-11 Gauss, Edmund, 40668 Meerbusch Stromerzeugungseinheit, u.a. bestehend aus Elektronenüberschuß erzeugender Farbe oder Folie und Stromspeicher
LU91561B1 (en) * 2009-04-30 2010-11-02 Univ Luxembourg Electrical and opto-electrical characterisation oflarge-area semiconductor devices.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3051636A (en) * 1960-03-30 1962-08-28 Minnesota Mining & Mfg Electrolytic preparation of cadmium salts
US3419484A (en) * 1966-03-23 1968-12-31 Chrysler Corp Electrolytic preparation of semiconductor compounds
NL6618449A (de) * 1966-12-12 1968-07-01
US3573177A (en) * 1968-01-11 1971-03-30 Us Army Electrochemical methods for production of films and coatings of semiconductors
JPS50115486A (de) * 1974-02-20 1975-09-10
US3887446A (en) * 1974-07-26 1975-06-03 Us Navy Electrochemical preparation of metallic tellurides
JPS5138888A (en) * 1974-09-27 1976-03-31 Matsushita Electric Ind Co Ltd Handotaisoshino seizohoho

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4296188A (en) * 1979-07-07 1981-10-20 Yeda Research And Development Company Ltd. Cd(Se,Te) Alloy photovoltaic materials
US4253919A (en) * 1980-01-21 1981-03-03 The International Nickel Company, Inc. Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath
US4261802A (en) * 1980-02-21 1981-04-14 Ametek, Inc. Method of making a photovoltaic cell
US4256544A (en) * 1980-04-04 1981-03-17 Bell Telephone Laboratories, Incorporated Method of making metal-chalcogenide photosensitive devices
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell

Also Published As

Publication number Publication date
AU2594777A (en) 1978-12-14
IT1080884B (it) 1985-05-16
NL186611B (nl) 1990-08-01
AU513645B2 (en) 1980-12-11
DE2726009A1 (de) 1977-12-29
MX145655A (es) 1982-03-19
IL52216A (en) 1980-01-31
JPS6132831B2 (de) 1986-07-29
BE855499A (fr) 1977-10-03
IL52216A0 (en) 1977-08-31
FR2354131A1 (fr) 1978-01-06
NL7706280A (nl) 1977-12-12
JPS5310989A (en) 1978-01-31
CA1077161A (en) 1980-05-06
NL186611C (nl) 1991-01-02
FR2354131B1 (de) 1983-01-21

Similar Documents

Publication Publication Date Title
GB1532616A (en) Photo-voltaic power generating means and methods
GB1529139A (en) Photovoltaic cell and a method of manufacturing such a cell
US4879251A (en) Method of making series-connected, thin-film solar module formed of crystalline silicon
EP0837511A3 (de) Sonnenzelle und Herstellungsverfahren
EP0021774B1 (de) Photo-voltaische Zellen und Verfahren zur Herstellung derartiger Zellen
US5593917A (en) Method of making semiconductor components with electrochemical recovery of the substrate
US3013955A (en) Method of transistor manufacture
GB1528373A (en) Photovoltaic cell
FR2549642B1 (fr) Cellule solaire
GB1398006A (en) Semiconductor electroluminescent devices and to methods of making them
US4342879A (en) Thin film photovoltaic device
ES8501569A1 (es) Procedimiento para impedir cortocircuitos o derivaciones en una celula solar de capa delgada de gran superficie
EP0080492B1 (de) Goldplattierungsverfahren
US4163987A (en) GaAs-GaAlAs solar cells
US3112230A (en) Photoelectric semiconductor device
AU3404589A (en) Thin film photovoltaic device
US4045252A (en) Method of manufacturing a semiconductor structure for microwave operation, including a very thin insulating or weakly doped layer
GB1445586A (en) Charge storage targets
EP0244963A3 (de) Elektrogalvanisch aufgetragene dotierte II-VI-Halbleiterschichten sowie aus diesen Schichten bestehende Anordnungen
GB1335979A (en) Cold cathode structure
US3666567A (en) Method of forming an ohmic contact region in a thin semiconductor layer
US3349476A (en) Formation of large area contacts to semiconductor devices
KR970060539A (ko) 후면 함몰전극형 태양전지의 제조방법
JPS56114384A (en) Solar battery
GB1286674A (en) Transferred electron devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19960530