GB1521281A - Electronic devices utilising cold electron emitters - Google Patents
Electronic devices utilising cold electron emittersInfo
- Publication number
- GB1521281A GB1521281A GB51975A GB51975A GB1521281A GB 1521281 A GB1521281 A GB 1521281A GB 51975 A GB51975 A GB 51975A GB 51975 A GB51975 A GB 51975A GB 1521281 A GB1521281 A GB 1521281A
- Authority
- GB
- United Kingdom
- Prior art keywords
- depressions
- emitter
- electronic devices
- cold cathode
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
1521281 Cold cathode materials and processing ENGLISH ELECTRIC VALVE CO Ltd 13 Oct 1975 [7 Jan 1975] 519/75 Headings H1D and H1K A cold cathode of the negative electron affinity type comprises a semiconductor body 1 into which extend a number of depressions 5 such that the sides of the depressions constitute electron emitting surfaces and a metal film 3 is provided on the semiconductor body surface in a pattern around the depressions. The depressions in the plane of the emitter may be in the form of a regular matrix or a series of channels, and, in an example, a matrix of depressions have a depth, width and separation of 10 Ám. The emitter is made by providing an etch resistant pattern on the surface of a gallium arsenide phosphide semiconductor chip, etching to produce the depressions 5, removing the resist layer and diffusing a dopant into the surface to provide the p-type layer 2. The metal contact layer 3 is then provided and the emitter is activated by a conventional caesiating procedure.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB51975A GB1521281A (en) | 1975-01-07 | 1975-01-07 | Electronic devices utilising cold electron emitters |
DE19752511816 DE2511816C3 (en) | 1975-01-07 | 1975-03-18 | Cold cathodes and processes for their manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB51975A GB1521281A (en) | 1975-01-07 | 1975-01-07 | Electronic devices utilising cold electron emitters |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1521281A true GB1521281A (en) | 1978-08-16 |
Family
ID=9705795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB51975A Expired GB1521281A (en) | 1975-01-07 | 1975-01-07 | Electronic devices utilising cold electron emitters |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1521281A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3538175A1 (en) * | 1984-11-21 | 1986-05-22 | N.V. Philips' Gloeilampenfabrieken, Eindhoven | SEMICONDUCTOR ARRANGEMENT WITH INCREASED STABILITY |
-
1975
- 1975-01-07 GB GB51975A patent/GB1521281A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3538175A1 (en) * | 1984-11-21 | 1986-05-22 | N.V. Philips' Gloeilampenfabrieken, Eindhoven | SEMICONDUCTOR ARRANGEMENT WITH INCREASED STABILITY |
FR2573573A1 (en) * | 1984-11-21 | 1986-05-23 | Philips Nv | SEMICONDUCTOR CATHODE WITH INCREASED STABILITY |
Also Published As
Publication number | Publication date |
---|---|
DE2511816A1 (en) | 1976-07-15 |
DE2511816B2 (en) | 1977-03-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |