GB1516922A - Integrated semiconductor device - Google Patents

Integrated semiconductor device

Info

Publication number
GB1516922A
GB1516922A GB4109/76A GB410976A GB1516922A GB 1516922 A GB1516922 A GB 1516922A GB 4109/76 A GB4109/76 A GB 4109/76A GB 410976 A GB410976 A GB 410976A GB 1516922 A GB1516922 A GB 1516922A
Authority
GB
United Kingdom
Prior art keywords
capacitor
transistor
junction
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4109/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1516922A publication Critical patent/GB1516922A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/64Variable-capacitance diodes, e.g. varactors 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB4109/76A 1975-03-14 1976-02-03 Integrated semiconductor device Expired GB1516922A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55859075A 1975-03-14 1975-03-14

Publications (1)

Publication Number Publication Date
GB1516922A true GB1516922A (en) 1978-07-05

Family

ID=24230141

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4109/76A Expired GB1516922A (en) 1975-03-14 1976-02-03 Integrated semiconductor device

Country Status (7)

Country Link
US (1) UST983011I4 (enExample)
JP (1) JPS51114088A (enExample)
CA (1) CA1043470A (enExample)
DE (1) DE2607177A1 (enExample)
FR (1) FR2304179A1 (enExample)
GB (1) GB1516922A (enExample)
IT (1) IT1055397B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3326957C2 (de) * 1983-07-27 1986-07-31 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung
DE3326958C2 (de) * 1983-07-27 1986-07-10 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung zum Verstärken

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225305C2 (de) * 1963-03-26 1973-07-19 Telefunken Patent Integrierte Halbleiterbauelementenanordnung bzw. Festkoerperschaltung
GB1332653A (en) * 1971-04-19 1973-10-03 Marconi Co Ltd Intergrated circuits

Also Published As

Publication number Publication date
IT1055397B (it) 1981-12-21
DE2607177A1 (de) 1976-09-30
FR2304179B1 (enExample) 1978-11-10
JPS51114088A (en) 1976-10-07
JPS5530302B2 (enExample) 1980-08-09
CA1043470A (en) 1978-11-28
FR2304179A1 (fr) 1976-10-08
UST983011I4 (en) 1979-06-05
DE2607177C2 (enExample) 1988-01-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940203