IT1055397B - Struttura per stabilizzare un dispositivo semicondutture bipolare utilizzato in configurazioni circuitali di commutazione della corrente o a seguitore di emetti tore - Google Patents

Struttura per stabilizzare un dispositivo semicondutture bipolare utilizzato in configurazioni circuitali di commutazione della corrente o a seguitore di emetti tore

Info

Publication number
IT1055397B
IT1055397B IT20383/76A IT2038376A IT1055397B IT 1055397 B IT1055397 B IT 1055397B IT 20383/76 A IT20383/76 A IT 20383/76A IT 2038376 A IT2038376 A IT 2038376A IT 1055397 B IT1055397 B IT 1055397B
Authority
IT
Italy
Prior art keywords
semiconducture
circuitual
bipolar
stabilize
current
Prior art date
Application number
IT20383/76A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1055397B publication Critical patent/IT1055397B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658Vertical bipolar transistor in combination with resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H01L27/0794Combinations of capacitors and resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT20383/76A 1975-03-14 1976-02-20 Struttura per stabilizzare un dispositivo semicondutture bipolare utilizzato in configurazioni circuitali di commutazione della corrente o a seguitore di emetti tore IT1055397B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55859075A 1975-03-14 1975-03-14

Publications (1)

Publication Number Publication Date
IT1055397B true IT1055397B (it) 1981-12-21

Family

ID=24230141

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20383/76A IT1055397B (it) 1975-03-14 1976-02-20 Struttura per stabilizzare un dispositivo semicondutture bipolare utilizzato in configurazioni circuitali di commutazione della corrente o a seguitore di emetti tore

Country Status (7)

Country Link
US (1) UST983011I4 (it)
JP (1) JPS51114088A (it)
CA (1) CA1043470A (it)
DE (1) DE2607177A1 (it)
FR (1) FR2304179A1 (it)
GB (1) GB1516922A (it)
IT (1) IT1055397B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3326958C2 (de) * 1983-07-27 1986-07-10 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung zum Verstärken
DE3326957C2 (de) * 1983-07-27 1986-07-31 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225305C2 (de) * 1963-03-26 1973-07-19 Telefunken Patent Integrierte Halbleiterbauelementenanordnung bzw. Festkoerperschaltung
GB1332653A (en) * 1971-04-19 1973-10-03 Marconi Co Ltd Intergrated circuits

Also Published As

Publication number Publication date
JPS5530302B2 (it) 1980-08-09
FR2304179A1 (fr) 1976-10-08
JPS51114088A (en) 1976-10-07
DE2607177A1 (de) 1976-09-30
GB1516922A (en) 1978-07-05
FR2304179B1 (it) 1978-11-10
CA1043470A (en) 1978-11-28
DE2607177C2 (it) 1988-01-07
UST983011I4 (en) 1979-06-05

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