UST983011I4 - Arrangement for stabilizing a bipolar semiconductor device utilized in emitter follower or current switching configuration - Google Patents

Arrangement for stabilizing a bipolar semiconductor device utilized in emitter follower or current switching configuration Download PDF

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Publication number
UST983011I4
UST983011I4 US05/710,351 US71035176A UST983011I4 US T983011 I4 UST983011 I4 US T983011I4 US 71035176 A US71035176 A US 71035176A US T983011 I4 UST983011 I4 US T983011I4
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US
United States
Prior art keywords
semiconductor device
base
stabilizing
arrangement
current switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US05/710,351
Inventor
Sylvester W. Giuliani
Arnold P. Mercer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of UST983011I4 publication Critical patent/UST983011I4/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H01L27/0794—Combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

an arrangement for stabilizing a bipolar semiconductor device such as might be commonly used in emitter follower or current switching configuration by the addition of lumped capacitance between the base of the semiconductor device and ground. In one preferred embodiment the lumped capacitance is derived from a flared or enlarged end of a base stabilizing resistor connected to the base of the semiconductor device, and in an alternative embodiment the capacitance is derived from a base collector junction of another unconnected semiconductor device located upon a common substrate with the semiconductor to be stabilized. The effect of the lumped capacitance, when added to the circuit, is to move the Zin plot of the transistor toward the fourth quadrant of a Nyquist diagram without the addition of a large series base resistance. The addition of the lumped capacitance is preferably utilized in conjunction with a small base stabilizing resistor in order to achieve stability in the input of the semiconductor.
US05/710,351 1975-03-14 1976-07-30 Arrangement for stabilizing a bipolar semiconductor device utilized in emitter follower or current switching configuration Pending UST983011I4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55859075A 1975-03-14 1975-03-14

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US55859075A Continuation 1975-03-14 1975-03-14

Publications (1)

Publication Number Publication Date
UST983011I4 true UST983011I4 (en) 1979-06-05

Family

ID=24230141

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/710,351 Pending UST983011I4 (en) 1975-03-14 1976-07-30 Arrangement for stabilizing a bipolar semiconductor device utilized in emitter follower or current switching configuration

Country Status (7)

Country Link
US (1) UST983011I4 (en)
JP (1) JPS51114088A (en)
CA (1) CA1043470A (en)
DE (1) DE2607177A1 (en)
FR (1) FR2304179A1 (en)
GB (1) GB1516922A (en)
IT (1) IT1055397B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3326957C2 (en) * 1983-07-27 1986-07-31 Telefunken electronic GmbH, 7100 Heilbronn Integrated circuit
DE3326958C2 (en) * 1983-07-27 1986-07-10 Telefunken electronic GmbH, 7100 Heilbronn Integrated circuit for amplification

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225305C2 (en) * 1963-03-26 1973-07-19 Telefunken Patent Integrated semiconductor component arrangement or solid-state circuit
GB1332653A (en) * 1971-04-19 1973-10-03 Marconi Co Ltd Intergrated circuits

Also Published As

Publication number Publication date
JPS51114088A (en) 1976-10-07
DE2607177C2 (en) 1988-01-07
GB1516922A (en) 1978-07-05
DE2607177A1 (en) 1976-09-30
FR2304179B1 (en) 1978-11-10
CA1043470A (en) 1978-11-28
FR2304179A1 (en) 1976-10-08
IT1055397B (en) 1981-12-21
JPS5530302B2 (en) 1980-08-09

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