FR2304179A1 - BIPOLAR SEMICONDUCTOR DEVICE MOUNTED IN TRANSMITTER-TRACKER WHOSE INPUT IS STABILIZED - Google Patents

BIPOLAR SEMICONDUCTOR DEVICE MOUNTED IN TRANSMITTER-TRACKER WHOSE INPUT IS STABILIZED

Info

Publication number
FR2304179A1
FR2304179A1 FR7601481A FR7601481A FR2304179A1 FR 2304179 A1 FR2304179 A1 FR 2304179A1 FR 7601481 A FR7601481 A FR 7601481A FR 7601481 A FR7601481 A FR 7601481A FR 2304179 A1 FR2304179 A1 FR 2304179A1
Authority
FR
France
Prior art keywords
stabilized
transmitter
semiconductor device
device mounted
whose input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7601481A
Other languages
French (fr)
Other versions
FR2304179B1 (en
Inventor
Sylvester W Giuliani
Arnold P Mercer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2304179A1 publication Critical patent/FR2304179A1/en
Application granted granted Critical
Publication of FR2304179B1 publication Critical patent/FR2304179B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H01L27/0794—Combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7601481A 1975-03-14 1976-01-14 BIPOLAR SEMICONDUCTOR DEVICE MOUNTED IN TRANSMITTER-TRACKER WHOSE INPUT IS STABILIZED Granted FR2304179A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55859075A 1975-03-14 1975-03-14

Publications (2)

Publication Number Publication Date
FR2304179A1 true FR2304179A1 (en) 1976-10-08
FR2304179B1 FR2304179B1 (en) 1978-11-10

Family

ID=24230141

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7601481A Granted FR2304179A1 (en) 1975-03-14 1976-01-14 BIPOLAR SEMICONDUCTOR DEVICE MOUNTED IN TRANSMITTER-TRACKER WHOSE INPUT IS STABILIZED

Country Status (7)

Country Link
US (1) UST983011I4 (en)
JP (1) JPS51114088A (en)
CA (1) CA1043470A (en)
DE (1) DE2607177A1 (en)
FR (1) FR2304179A1 (en)
GB (1) GB1516922A (en)
IT (1) IT1055397B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3326957C2 (en) * 1983-07-27 1986-07-31 Telefunken electronic GmbH, 7100 Heilbronn Integrated circuit
DE3326958C2 (en) * 1983-07-27 1986-07-10 Telefunken electronic GmbH, 7100 Heilbronn Integrated circuit for amplification

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225305C2 (en) * 1963-03-26 1973-07-19 Telefunken Patent Integrated semiconductor component arrangement or solid-state circuit
GB1332653A (en) * 1971-04-19 1973-10-03 Marconi Co Ltd Intergrated circuits

Also Published As

Publication number Publication date
JPS5530302B2 (en) 1980-08-09
CA1043470A (en) 1978-11-28
UST983011I4 (en) 1979-06-05
IT1055397B (en) 1981-12-21
JPS51114088A (en) 1976-10-07
FR2304179B1 (en) 1978-11-10
GB1516922A (en) 1978-07-05
DE2607177C2 (en) 1988-01-07
DE2607177A1 (en) 1976-09-30

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Legal Events

Date Code Title Description
ST Notification of lapse