GB1515571A - Methods of growing thin epitaxial films on a crystal substrate - Google Patents

Methods of growing thin epitaxial films on a crystal substrate

Info

Publication number
GB1515571A
GB1515571A GB21146/75A GB2114675A GB1515571A GB 1515571 A GB1515571 A GB 1515571A GB 21146/75 A GB21146/75 A GB 21146/75A GB 2114675 A GB2114675 A GB 2114675A GB 1515571 A GB1515571 A GB 1515571A
Authority
GB
United Kingdom
Prior art keywords
gaas
layer
region
molecular
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21146/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5859374A external-priority patent/JPS5516451B2/ja
Priority claimed from JP6529974A external-priority patent/JPS5516452B2/ja
Priority claimed from JP6530074A external-priority patent/JPS55901B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1515571A publication Critical patent/GB1515571A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB21146/75A 1974-05-23 1975-05-19 Methods of growing thin epitaxial films on a crystal substrate Expired GB1515571A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5859374A JPS5516451B2 (enrdf_load_stackoverflow) 1974-05-23 1974-05-23
JP6529974A JPS5516452B2 (enrdf_load_stackoverflow) 1974-06-07 1974-06-07
JP6530074A JPS55901B2 (enrdf_load_stackoverflow) 1974-06-07 1974-06-07

Publications (1)

Publication Number Publication Date
GB1515571A true GB1515571A (en) 1978-06-28

Family

ID=27296632

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21146/75A Expired GB1515571A (en) 1974-05-23 1975-05-19 Methods of growing thin epitaxial films on a crystal substrate

Country Status (4)

Country Link
CA (1) CA1011885A (enrdf_load_stackoverflow)
DE (1) DE2522921C3 (enrdf_load_stackoverflow)
FR (1) FR2272488B1 (enrdf_load_stackoverflow)
GB (1) GB1515571A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170043A (en) * 1984-12-07 1986-07-23 Sharp Kk Apparatus for the growth of semiconductor crystals
GB2170822A (en) * 1985-01-31 1986-08-13 Sharp Kk A method for the production of substrates coated with a uniform dispersion of extremely fine granules
GB2190541A (en) * 1986-03-25 1987-11-18 Sharp Kk A method for the production of semiconductor devices
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
GB2234393A (en) * 1989-07-05 1991-01-30 Sharp Kk Making electroluminescent device by molecular beam epitaxy
CN111415858A (zh) * 2020-03-12 2020-07-14 中国科学院长春光学精密机械与物理研究所 AlN或AlGaN薄膜材料的制备方法及应用

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3126050A1 (de) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Verfahren zur erzeugung monokristalliner oder grobpolykristalliner schichten
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1532425A (fr) * 1966-05-23 1968-07-12 Texas Instruments Inc Circuits intégrés et leurs procédés de fabrication
US3549432A (en) * 1968-07-15 1970-12-22 Texas Instruments Inc Multilayer microelectronic circuitry techniques
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170043A (en) * 1984-12-07 1986-07-23 Sharp Kk Apparatus for the growth of semiconductor crystals
US4693207A (en) * 1984-12-07 1987-09-15 Sharp Kabushiki Kaisha Apparatus for the growth of semiconductor crystals
GB2170822A (en) * 1985-01-31 1986-08-13 Sharp Kk A method for the production of substrates coated with a uniform dispersion of extremely fine granules
US4654229A (en) * 1985-01-31 1987-03-31 Sharp Kabushiki Kaisha Method for the production of substrates with a uniform dispersion of extremely fine granules
GB2170822B (en) * 1985-01-31 1989-06-07 Sharp Kk A method for the production of substrates having a uniform dispersion of ultra fine granules deposited thereon
GB2190541A (en) * 1986-03-25 1987-11-18 Sharp Kk A method for the production of semiconductor devices
US4842679A (en) * 1986-03-25 1989-06-27 Sharp Kabushiki Kaisha Method for the production of semiconductor devices
GB2190541B (en) * 1986-03-25 1989-11-15 Sharp Kk A method for the production of semiconductor devices
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
GB2234393A (en) * 1989-07-05 1991-01-30 Sharp Kk Making electroluminescent device by molecular beam epitaxy
GB2234393B (en) * 1989-07-05 1993-05-26 Sharp Kk Process for preparing electrominescent device of compound semiconductor
CN111415858A (zh) * 2020-03-12 2020-07-14 中国科学院长春光学精密机械与物理研究所 AlN或AlGaN薄膜材料的制备方法及应用

Also Published As

Publication number Publication date
FR2272488B1 (enrdf_load_stackoverflow) 1978-11-10
DE2522921C3 (de) 1983-12-15
DE2522921A1 (de) 1975-11-27
FR2272488A1 (enrdf_load_stackoverflow) 1975-12-19
CA1011885A (en) 1977-06-07
DE2522921B2 (de) 1979-06-07

Similar Documents

Publication Publication Date Title
US3751310A (en) Germanium doped epitaxial films by the molecular beam method
GB1469978A (en) Methods of producing semiconductor devices
JPH0834180B2 (ja) 化合物半導体薄膜の成長方法
GB1528192A (en) Surface treatment of iii-v compound crystals
GB1515571A (en) Methods of growing thin epitaxial films on a crystal substrate
JPH05144744A (ja) 半導体薄膜形成方法
CA1102013A (en) Molecular-beam epitaxy system and method including hydrogen treatment
GB1393337A (en) Method of growing a single crystal film
US4233092A (en) Utilizing lead compounds of sulphur, selenium and tellurium as dopant sources
Hariu et al. Plasma-assisted deposition and epitaxy of GaAs films
GB1473485A (en) Method for growing crystals of iii-v compound semicon ductors
Shimizu et al. Laser-induced MOCVD of ZnO thin films
US4847216A (en) Process for the deposition by epitaxy of a doped material
JPS5737827A (en) Manufacture of semiconductor device
US5081053A (en) Method for forming a transistor having cubic boron nitride layer
Hartmann Vapour phase epitaxy of II–VI compounds: A review
JPS56107550A (en) Molecular beam crystal growing process
Briot et al. Low temperature movpe growth of ZnSe layers using alkyls in a “double zone reactor”
JP3038463B2 (ja) 気相成長方法
EP0504960B1 (en) Phosphorus-alloyed cubic boron nitride films
KR960019761A (ko) p형 반도체 결정의 제조 방법
JP3047523B2 (ja) 選択エピタキシャル成長方法
DE2166427C3 (de) Verfahren zum epitaktischen Aufwachsen einer dotierten GaAs-Dünnschicht
JP3106526B2 (ja) 化合物半導体の成長方法
Nishizawa et al. Observation of the characteristic surface morphology of In1-xGaxP epitaxial layers with large lattice mismatch to the GaP substrate

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930519