JPS5516451B2 - - Google Patents

Info

Publication number
JPS5516451B2
JPS5516451B2 JP5859374A JP5859374A JPS5516451B2 JP S5516451 B2 JPS5516451 B2 JP S5516451B2 JP 5859374 A JP5859374 A JP 5859374A JP 5859374 A JP5859374 A JP 5859374A JP S5516451 B2 JPS5516451 B2 JP S5516451B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5859374A
Other languages
Japanese (ja)
Other versions
JPS50151064A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5859374A priority Critical patent/JPS5516451B2/ja
Priority to GB21146/75A priority patent/GB1515571A/en
Priority to CA227,555A priority patent/CA1011885A/en
Priority to FR7516116A priority patent/FR2272488B1/fr
Priority to DE2522921A priority patent/DE2522921C3/de
Publication of JPS50151064A publication Critical patent/JPS50151064A/ja
Publication of JPS5516451B2 publication Critical patent/JPS5516451B2/ja
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP5859374A 1974-05-23 1974-05-23 Expired JPS5516451B2 (enrdf_load_stackoverflow)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP5859374A JPS5516451B2 (enrdf_load_stackoverflow) 1974-05-23 1974-05-23
GB21146/75A GB1515571A (en) 1974-05-23 1975-05-19 Methods of growing thin epitaxial films on a crystal substrate
CA227,555A CA1011885A (en) 1974-05-23 1975-05-22 Molecular beam epitaxy method
FR7516116A FR2272488B1 (enrdf_load_stackoverflow) 1974-05-23 1975-05-23
DE2522921A DE2522921C3 (de) 1974-05-23 1975-05-23 Verfahren zur epitaktischen Abscheidung dotierter III-V-Verbindungshalbleiter-Schichten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5859374A JPS5516451B2 (enrdf_load_stackoverflow) 1974-05-23 1974-05-23

Publications (2)

Publication Number Publication Date
JPS50151064A JPS50151064A (enrdf_load_stackoverflow) 1975-12-04
JPS5516451B2 true JPS5516451B2 (enrdf_load_stackoverflow) 1980-05-02

Family

ID=13088778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5859374A Expired JPS5516451B2 (enrdf_load_stackoverflow) 1974-05-23 1974-05-23

Country Status (1)

Country Link
JP (1) JPS5516451B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269560A (en) * 1975-12-08 1977-06-09 Mitsubishi Electric Corp Electronic line irradiation epitaxial method
JPS5372A (en) * 1976-06-24 1978-01-05 Agency Of Ind Science & Technol Selective doping crystal growing method
JPH04216616A (ja) * 1990-12-17 1992-08-06 A T R Koudenpa Tsushin Kenkyusho:Kk 分子線エピタキシャル成長薄膜結晶の伝導型制御方法及び当該制御方法を使用する分子線エピタキシャル装置

Also Published As

Publication number Publication date
JPS50151064A (enrdf_load_stackoverflow) 1975-12-04

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