GB1515260A - Reverse conduction thyristor - Google Patents

Reverse conduction thyristor

Info

Publication number
GB1515260A
GB1515260A GB12726/77A GB1272677A GB1515260A GB 1515260 A GB1515260 A GB 1515260A GB 12726/77 A GB12726/77 A GB 12726/77A GB 1272677 A GB1272677 A GB 1272677A GB 1515260 A GB1515260 A GB 1515260A
Authority
GB
United Kingdom
Prior art keywords
layer
thyristor
zone
diode
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12726/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alstom SA
Original Assignee
Alsthom Atlantique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Atlantique SA filed Critical Alsthom Atlantique SA
Publication of GB1515260A publication Critical patent/GB1515260A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]

Landscapes

  • Thyristors (AREA)
GB12726/77A 1976-04-08 1977-03-25 Reverse conduction thyristor Expired GB1515260A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7610265A FR2347781A1 (fr) 1976-04-08 1976-04-08 Thyristor a conduction inverse

Publications (1)

Publication Number Publication Date
GB1515260A true GB1515260A (en) 1978-06-21

Family

ID=9171563

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12726/77A Expired GB1515260A (en) 1976-04-08 1977-03-25 Reverse conduction thyristor

Country Status (7)

Country Link
BE (1) BE852825A (enExample)
CH (1) CH600574A5 (enExample)
DE (1) DE2715206A1 (enExample)
FR (1) FR2347781A1 (enExample)
GB (1) GB1515260A (enExample)
IT (1) IT1084467B (enExample)
NL (1) NL7703747A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572375A (en) * 1984-11-26 1986-02-25 Baer Carl D Container for dispersant

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109372A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device
FR2524715A1 (fr) * 1982-03-30 1983-10-07 Thomson Csf Diode rapide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572375A (en) * 1984-11-26 1986-02-25 Baer Carl D Container for dispersant

Also Published As

Publication number Publication date
FR2347781A1 (fr) 1977-11-04
BE852825A (fr) 1977-09-26
IT1084467B (it) 1985-05-25
CH600574A5 (enExample) 1978-06-15
DE2715206A1 (de) 1977-10-20
NL7703747A (nl) 1977-10-11
FR2347781B1 (enExample) 1979-10-05

Similar Documents

Publication Publication Date Title
JPS5539619A (en) Thyristor
JPS5522840A (en) Semiconductor switching element and manufacturing method thereof
US4286279A (en) Multilayer semiconductor switching devices
GB1529050A (en) Semiconductor device
GB971261A (en) Improvements in semiconductor devices
ES364658A1 (es) Un dispositivo semiconductor.
GB1515260A (en) Reverse conduction thyristor
US4089024A (en) Semiconductor switching device
US4325074A (en) Semiconductor switching device
US4190853A (en) Multilayer semiconductor switching devices
JPS5778172A (en) Gate turn-off thyristor
US4063278A (en) Semiconductor switch having sensitive gate characteristics at high temperatures
JPS57138175A (en) Controlled rectifier for semiconductor
JPS5655068A (en) Thyristor
JPS57181162A (en) Gate turn off thyristor
JPS57206072A (en) Semiconductor device
JPS5493989A (en) Semiconductor device
JPS5574169A (en) Silicon control rectifier
JPS6411367A (en) Gate turn-off thyristor
JPS5596678A (en) Reverse conducting thyristor
JPS55127067A (en) Manufacture of reverse-conductive thyristor
JPS5660058A (en) Semiconductor device
JPS57122579A (en) Zener diode
JPS5559769A (en) Switching transistor
JPS5494288A (en) 2 terminal reverse conducting thyristor

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee