GB1502953A - Semiconductor device and a method of fabricating the same - Google Patents

Semiconductor device and a method of fabricating the same

Info

Publication number
GB1502953A
GB1502953A GB7109/75A GB710975A GB1502953A GB 1502953 A GB1502953 A GB 1502953A GB 7109/75 A GB7109/75 A GB 7109/75A GB 710975 A GB710975 A GB 710975A GB 1502953 A GB1502953 A GB 1502953A
Authority
GB
United Kingdom
Prior art keywords
layer
type
mesa
gaas
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7109/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1502953A publication Critical patent/GB1502953A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
GB7109/75A 1974-03-04 1975-02-20 Semiconductor device and a method of fabricating the same Expired GB1502953A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2426174A JPS5248066B2 (en:Method) 1974-03-04 1974-03-04

Publications (1)

Publication Number Publication Date
GB1502953A true GB1502953A (en) 1978-03-08

Family

ID=12133281

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7109/75A Expired GB1502953A (en) 1974-03-04 1975-02-20 Semiconductor device and a method of fabricating the same

Country Status (5)

Country Link
JP (1) JPS5248066B2 (en:Method)
DE (1) DE2507357C2 (en:Method)
FR (1) FR2263624B1 (en:Method)
GB (1) GB1502953A (en:Method)
NL (1) NL165891C (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154059A (en) * 1984-01-25 1985-08-29 Hitachi Ltd Light emitting chip and communication apparatus using the same
US4701927A (en) * 1984-01-25 1987-10-20 Hitachi, Ltd. Light emitting chip and optical communication apparatus using the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576273B2 (en:Method) * 1975-03-08 1982-02-04
JPS531482A (en) * 1976-06-25 1978-01-09 Mitsubishi Electric Corp Semiconductor injection type laser
NL7609607A (nl) * 1976-08-30 1978-03-02 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
NL184715C (nl) * 1978-09-20 1989-10-02 Hitachi Ltd Halfgeleiderlaserinrichting.
FR2502847A1 (fr) * 1981-03-25 1982-10-01 Western Electric Co Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant
GB2156584B (en) * 1984-03-16 1987-11-04 Hitachi Ltd Semiconductor laser chip
WO2004073125A1 (ja) * 2003-02-12 2004-08-26 Sharp Kabushiki Kaisha 半導体レーザ素子、光学ヘッド、及び情報記録装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359508A (en) * 1964-02-19 1967-12-19 Gen Electric High power junction laser structure
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
DE2137892C3 (de) * 1971-07-29 1978-05-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
DE2165539C3 (de) * 1971-12-30 1979-12-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Doppelhetero-Diodenlaser auf Halb' leiterbasis

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154059A (en) * 1984-01-25 1985-08-29 Hitachi Ltd Light emitting chip and communication apparatus using the same
US4701927A (en) * 1984-01-25 1987-10-20 Hitachi, Ltd. Light emitting chip and optical communication apparatus using the same

Also Published As

Publication number Publication date
NL165891B (nl) 1980-12-15
JPS50119584A (en:Method) 1975-09-19
NL7501990A (nl) 1975-09-08
FR2263624A1 (en:Method) 1975-10-03
NL165891C (nl) 1981-05-15
DE2507357A1 (de) 1975-09-11
JPS5248066B2 (en:Method) 1977-12-07
FR2263624B1 (en:Method) 1982-12-17
DE2507357C2 (de) 1983-08-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19950219