GB1494640A - Image-forming on light-sensitive element containing a quinone diazide - Google Patents

Image-forming on light-sensitive element containing a quinone diazide

Info

Publication number
GB1494640A
GB1494640A GB55829/74A GB5582974A GB1494640A GB 1494640 A GB1494640 A GB 1494640A GB 55829/74 A GB55829/74 A GB 55829/74A GB 5582974 A GB5582974 A GB 5582974A GB 1494640 A GB1494640 A GB 1494640A
Authority
GB
United Kingdom
Prior art keywords
light
layer
quinone diazide
compound
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB55829/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to GB55829/74A priority Critical patent/GB1494640A/en
Priority to DE19742461912 priority patent/DE2461912A1/de
Publication of GB1494640A publication Critical patent/GB1494640A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
GB55829/74A 1974-12-24 1974-12-24 Image-forming on light-sensitive element containing a quinone diazide Expired GB1494640A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB55829/74A GB1494640A (en) 1974-12-24 1974-12-24 Image-forming on light-sensitive element containing a quinone diazide
DE19742461912 DE2461912A1 (de) 1974-12-24 1974-12-31 Verfahren zur bildausbildung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB55829/74A GB1494640A (en) 1974-12-24 1974-12-24 Image-forming on light-sensitive element containing a quinone diazide
DE19742461912 DE2461912A1 (de) 1974-12-24 1974-12-31 Verfahren zur bildausbildung

Publications (1)

Publication Number Publication Date
GB1494640A true GB1494640A (en) 1977-12-07

Family

ID=25768187

Family Applications (1)

Application Number Title Priority Date Filing Date
GB55829/74A Expired GB1494640A (en) 1974-12-24 1974-12-24 Image-forming on light-sensitive element containing a quinone diazide

Country Status (2)

Country Link
DE (1) DE2461912A1 (de)
GB (1) GB1494640A (de)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431725A (en) * 1978-12-28 1984-02-14 Hiromichi Tachikawa Light-sensitive material and image forming processes using the same
US4576901A (en) * 1983-07-11 1986-03-18 Hoechst Aktiengesellschaft Process for producing negative copies by means of a material based on 1,2-quinone diazides with 4-ester or amide substitution
EP0212482A2 (de) * 1985-08-12 1987-03-04 Hoechst Celanese Corporation Verfahren zur Herstellung negativer Bilder aus einem positiv arbeitenden Photoresist
WO1988002878A1 (en) * 1986-10-20 1988-04-21 Macdermid, Incorporated Image reversal system and process
EP0301332A2 (de) * 1987-07-27 1989-02-01 Ciba-Geigy Ag Positiv-Fotoresist-Zusammensetzungen
US4931381A (en) * 1985-08-12 1990-06-05 Hoechst Celanese Corporation Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US5225310A (en) * 1987-06-02 1993-07-06 Hoechst Aktiengesellschaft Photosensitive mixture containing an ester or amide of 1,2-naphthoquinone diazide sulfonic or carboxylic acid, a phenolic binder resin and a bis-(4-hydroxyphenyl) speed enhancing compound
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5302488A (en) * 1991-02-28 1994-04-12 Hoechst Aktiengesellschaft Radiation-sensitive polymers containing naphthoquinone-2-diazide-4-sulfonyl groups and their use in a positive working recording material
US5326826A (en) * 1991-02-28 1994-07-05 Hoechst Aktiengesellschaft Radiation-sensitive polymers containing diazocarbonyl groups and a process for their preparation
US5380622A (en) * 1990-04-27 1995-01-10 Basf Aktiengesellschaft Production of negative relief copies

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2846256A1 (de) * 1977-10-24 1979-04-26 Fuji Photo Film Co Ltd Verfahren zur entwicklung positiv wirkender lichtempfindlicher planographischer druckplatten
DE2855723C2 (de) * 1978-12-22 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen eines Negativmusters einer Vorlage aus einem Positivlack
GB2046931B (en) * 1979-02-27 1983-03-16 Fuji Photo Film Co Ltd Method of developing positive-acting photosensitive lithographic printing plate precursor
JPS587054B2 (ja) * 1979-06-18 1983-02-08 富士通株式会社 レジスト・パタ−ン形成法
US4460674A (en) * 1981-01-16 1984-07-17 Konishiroku Photo Industry Co., Ltd. Posi-type quinone diazide photosensitive composition with sensitizer therefor
US4609615A (en) * 1983-03-31 1986-09-02 Oki Electric Industry Co., Ltd. Process for forming pattern with negative resist using quinone diazide compound
ATE47631T1 (de) * 1985-03-11 1989-11-15 Hoechst Celanese Corp Verfahren zum herstellen von photoresiststrukturen.

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431725A (en) * 1978-12-28 1984-02-14 Hiromichi Tachikawa Light-sensitive material and image forming processes using the same
US4576901A (en) * 1983-07-11 1986-03-18 Hoechst Aktiengesellschaft Process for producing negative copies by means of a material based on 1,2-quinone diazides with 4-ester or amide substitution
EP0212482A2 (de) * 1985-08-12 1987-03-04 Hoechst Celanese Corporation Verfahren zur Herstellung negativer Bilder aus einem positiv arbeitenden Photoresist
EP0212482A3 (en) * 1985-08-12 1987-12-09 Hoechst Celanese Corporation Process for obtaining negative images from positive photoresists
US5399456A (en) * 1985-08-12 1995-03-21 Hoechst Celanese Corporation Image reversal negative working photoresist containing O-quinone diazide and cross-linking compound
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US4931381A (en) * 1985-08-12 1990-06-05 Hoechst Celanese Corporation Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
WO1988002878A1 (en) * 1986-10-20 1988-04-21 Macdermid, Incorporated Image reversal system and process
US5225310A (en) * 1987-06-02 1993-07-06 Hoechst Aktiengesellschaft Photosensitive mixture containing an ester or amide of 1,2-naphthoquinone diazide sulfonic or carboxylic acid, a phenolic binder resin and a bis-(4-hydroxyphenyl) speed enhancing compound
EP0301332A3 (en) * 1987-07-27 1989-07-12 Ciba-Geigy Ag Positive-photoresist compositions
EP0301332A2 (de) * 1987-07-27 1989-02-01 Ciba-Geigy Ag Positiv-Fotoresist-Zusammensetzungen
US5380622A (en) * 1990-04-27 1995-01-10 Basf Aktiengesellschaft Production of negative relief copies
US5302488A (en) * 1991-02-28 1994-04-12 Hoechst Aktiengesellschaft Radiation-sensitive polymers containing naphthoquinone-2-diazide-4-sulfonyl groups and their use in a positive working recording material
US5326826A (en) * 1991-02-28 1994-07-05 Hoechst Aktiengesellschaft Radiation-sensitive polymers containing diazocarbonyl groups and a process for their preparation

Also Published As

Publication number Publication date
DE2461912A1 (de) 1976-07-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19941223