GB1483883A - Non-crucible zone melting of crystalline semiconductor rods - Google Patents
Non-crucible zone melting of crystalline semiconductor rodsInfo
- Publication number
- GB1483883A GB1483883A GB628976A GB628976A GB1483883A GB 1483883 A GB1483883 A GB 1483883A GB 628976 A GB628976 A GB 628976A GB 628976 A GB628976 A GB 628976A GB 1483883 A GB1483883 A GB 1483883A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- crystalline
- zone
- clamped
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004857 zone melting Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 230000005294 ferromagnetic effect Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752514824 DE2514824A1 (de) | 1975-04-04 | 1975-04-04 | Verfahren zum gezielten einbringen von dotierungsstoffen in halbleiterkristallen beim tiegelfreien zonenschmelzen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1483883A true GB1483883A (en) | 1977-08-24 |
Family
ID=5943121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB628976A Expired GB1483883A (en) | 1975-04-04 | 1976-02-18 | Non-crucible zone melting of crystalline semiconductor rods |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS51123062A (enrdf_load_stackoverflow) |
| BE (1) | BE840358R (enrdf_load_stackoverflow) |
| DD (1) | DD125474A6 (enrdf_load_stackoverflow) |
| DE (1) | DE2514824A1 (enrdf_load_stackoverflow) |
| DK (1) | DK105876A (enrdf_load_stackoverflow) |
| GB (1) | GB1483883A (enrdf_load_stackoverflow) |
| IT (1) | IT1058513B (enrdf_load_stackoverflow) |
| LU (1) | LU74104A1 (enrdf_load_stackoverflow) |
| PL (1) | PL101699B3 (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2338338C3 (de) * | 1973-07-27 | 1979-04-12 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes |
-
1975
- 1975-04-04 DE DE19752514824 patent/DE2514824A1/de not_active Ceased
- 1975-12-24 LU LU74104A patent/LU74104A1/xx unknown
-
1976
- 1976-02-18 GB GB628976A patent/GB1483883A/en not_active Expired
- 1976-03-11 DK DK105876A patent/DK105876A/da not_active Application Discontinuation
- 1976-03-24 IT IT2152176A patent/IT1058513B/it active
- 1976-03-31 JP JP3589576A patent/JPS51123062A/ja active Pending
- 1976-04-02 PL PL18846076A patent/PL101699B3/pl unknown
- 1976-04-02 DD DD19218076A patent/DD125474A6/xx unknown
- 1976-04-02 BE BE165828A patent/BE840358R/xx active
Also Published As
| Publication number | Publication date |
|---|---|
| LU74104A1 (enrdf_load_stackoverflow) | 1976-07-20 |
| DE2514824A1 (de) | 1976-10-14 |
| DD125474A6 (enrdf_load_stackoverflow) | 1977-04-20 |
| DK105876A (da) | 1976-10-05 |
| BE840358R (fr) | 1976-08-02 |
| PL101699B3 (pl) | 1979-01-31 |
| IT1058513B (it) | 1982-05-10 |
| JPS51123062A (en) | 1976-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB829422A (en) | Method and apparatus for producing semi-conductor materials of high purity | |
| US2876147A (en) | Method of and apparatus for producing semiconductor material | |
| GB1528897A (en) | Method of purifying silicon | |
| GB1430883A (en) | Non-crucible zone melting of crystalline semiconductor rods | |
| GB1476915A (en) | Drawing crystals from a melt | |
| GB778123A (en) | Crystal production | |
| GB1286024A (en) | Method of producing single semiconductor crystals | |
| GB916390A (en) | Method of drawing a semi-conductor rod from a melt | |
| EP0174004A3 (en) | Process for making a crystalline article from a melt | |
| US3977934A (en) | Silicon manufacture | |
| GB1483883A (en) | Non-crucible zone melting of crystalline semiconductor rods | |
| US3781209A (en) | Method of producing homogeneous rods of semiconductor material | |
| US3658598A (en) | Method of crucible-free zone melting crystalline rods, especially of semiconductor material | |
| GB1216522A (en) | Zone-by-zone melting a rod | |
| GB1532604A (en) | Method and apparatus for manufacturing hollow and solid ingots | |
| GB1075706A (en) | Production of dislocation-free single crystals of semiconductor material | |
| GB1065187A (en) | A method of producing a rod of semi-conductor material | |
| GB1375132A (enrdf_load_stackoverflow) | ||
| GB1081827A (en) | Improvements in or relating to a floating zone process | |
| US4045278A (en) | Method and apparatus for floating melt zone of semiconductor crystal rods | |
| GB1284008A (en) | Improvements in or relating to the non-crucible zone melting of a crystalline rod | |
| GB1475261A (en) | Siliceous materials | |
| GB906485A (en) | Improvements in the production of mono-crystalline semiconductor material | |
| US3607109A (en) | Method and means of producing a large diameter single-crystal rod from a polycrystal bar | |
| JPS569231A (en) | Manufacture of glass rod or pipe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |