GB1480138A - Transistor memory array - Google Patents

Transistor memory array

Info

Publication number
GB1480138A
GB1480138A GB29480/74A GB2948074A GB1480138A GB 1480138 A GB1480138 A GB 1480138A GB 29480/74 A GB29480/74 A GB 29480/74A GB 2948074 A GB2948074 A GB 2948074A GB 1480138 A GB1480138 A GB 1480138A
Authority
GB
United Kingdom
Prior art keywords
transistors
transistor
bit line
cells
selection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29480/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7309453A external-priority patent/NL7309453A/xx
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1480138A publication Critical patent/GB1480138A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
GB29480/74A 1973-07-06 1974-07-03 Transistor memory array Expired GB1480138A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7309453A NL7309453A (nl) 1973-07-06 1973-07-06 Geheugenmatrix.
NL7408502A NL7408502A (nl) 1973-07-06 1974-06-25 Geheugenmatrix.

Publications (1)

Publication Number Publication Date
GB1480138A true GB1480138A (en) 1977-07-20

Family

ID=26644895

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29480/74A Expired GB1480138A (en) 1973-07-06 1974-07-03 Transistor memory array

Country Status (9)

Country Link
JP (1) JPS5516354B2 (de)
AT (1) AT344424B (de)
CH (1) CH585948A5 (de)
DE (1) DE2432099B2 (de)
FR (1) FR2236248B1 (de)
GB (1) GB1480138A (de)
IT (1) IT1014450B (de)
NL (1) NL7408502A (de)
SE (1) SE399605B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672579A (en) * 1984-06-25 1987-06-09 International Business Machines Corporation MTL storage cell with inherent output multiplex capability

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4112511A (en) * 1977-09-13 1978-09-05 Signetics Corporation Four transistor static bipolar memory cell using merged transistors
DE2967103D1 (en) * 1978-10-03 1984-08-16 Tokyo Shibaura Electric Co Semiconductor memory device
DE3174546D1 (en) * 1981-05-30 1986-06-12 Ibm Deutschland High-speed large-scale integrated memory with bipolar transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672579A (en) * 1984-06-25 1987-06-09 International Business Machines Corporation MTL storage cell with inherent output multiplex capability

Also Published As

Publication number Publication date
JPS5516354B2 (de) 1980-05-01
SE7408741L (de) 1975-01-07
DE2432099B2 (de) 1978-05-24
DE2432099C3 (de) 1979-02-08
CH585948A5 (de) 1977-03-15
JPS5050832A (de) 1975-05-07
AT344424B (de) 1978-07-25
IT1014450B (it) 1977-04-20
FR2236248B1 (de) 1977-10-07
SE399605B (sv) 1978-02-20
NL7408502A (nl) 1975-12-30
DE2432099A1 (de) 1975-02-20
ATA558374A (de) 1977-11-15
FR2236248A1 (de) 1975-01-31

Similar Documents

Publication Publication Date Title
US4310900A (en) Memory device with different read and write power levels
US3284782A (en) Memory storage system
EP0096359A2 (de) Halbleiterspeicheranordnung
GB1409910A (en) Semiconductor data stores
GB1419834A (en) Integrated semiconductor memory cell array
GB1315728A (en) Data stores
US3919566A (en) Sense-write circuit for bipolar integrated circuit ram
US4322820A (en) Semiconductor integrated circuit device
EP0258715A2 (de) Statischer Direktzugriffspeicher einer Bi-CMOS-Konstruktion
JPS5827599B2 (ja) シユウセキカイロメモリ
US3863229A (en) Scr (or scs) memory array with internal and external load resistors
EP0218747A1 (de) Leseverstärker zur Verstärkung von Signalen auf einer vorgespannten Leitung
US3427598A (en) Emitter gated memory cell
US4373195A (en) Semiconductor integrated circuit device
GB1480138A (en) Transistor memory array
EP0316877B1 (de) Halbleiterspeicheranordnung mit verbesserter Ausgangsschaltung
US3735358A (en) Specialized array logic
US3821719A (en) Semiconductor memory
US3655999A (en) Shift register
US4654823A (en) Read/write memory and cell constituting same
US4398268A (en) Semiconductor integrated circuit device
JPS6334793A (ja) 半導体記憶装置
US3573756A (en) Associative memory circuitry
US4697251A (en) Bipolar RAM cell
US3503051A (en) Word organized memory comprising flip-flops with reset means associated with each flip-flop in the form of a clearing line generator coupled to the emitter of one of the transistors of the flip-flop

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee