GB1458579A - Semi-conductor gate controlled switch devices - Google Patents

Semi-conductor gate controlled switch devices

Info

Publication number
GB1458579A
GB1458579A GB964474A GB964474A GB1458579A GB 1458579 A GB1458579 A GB 1458579A GB 964474 A GB964474 A GB 964474A GB 964474 A GB964474 A GB 964474A GB 1458579 A GB1458579 A GB 1458579A
Authority
GB
United Kingdom
Prior art keywords
region
semi
conductor
transistor
faced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB964474A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1458579A publication Critical patent/GB1458579A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
GB964474A 1973-03-06 1974-03-04 Semi-conductor gate controlled switch devices Expired GB1458579A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2646873A JPS5416839B2 (enrdf_load_stackoverflow) 1973-03-06 1973-03-06

Publications (1)

Publication Number Publication Date
GB1458579A true GB1458579A (en) 1976-12-15

Family

ID=12194336

Family Applications (1)

Application Number Title Priority Date Filing Date
GB964474A Expired GB1458579A (en) 1973-03-06 1974-03-04 Semi-conductor gate controlled switch devices

Country Status (4)

Country Link
JP (1) JPS5416839B2 (enrdf_load_stackoverflow)
DE (1) DE2410721A1 (enrdf_load_stackoverflow)
GB (1) GB1458579A (enrdf_load_stackoverflow)
NL (1) NL7403063A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3345449A1 (de) * 1982-12-21 1984-07-12 International Rectifier Corp., Los Angeles, Calif. Festkoerper-wechselspannungsrelais
WO2023233262A1 (en) * 2022-05-29 2023-12-07 Soreq Nuclear Research Center Silicon controlled rectifier with schottky anode contact

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2835089A1 (de) * 1978-08-10 1980-03-20 Siemens Ag Thyristor
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
JPH0760891B2 (ja) * 1985-11-01 1995-06-28 日本電信電話株式会社 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3345449A1 (de) * 1982-12-21 1984-07-12 International Rectifier Corp., Los Angeles, Calif. Festkoerper-wechselspannungsrelais
GB2174242A (en) * 1982-12-21 1986-10-29 Int Rectifier Corp Optically fired lateral thyristor structure
WO2023233262A1 (en) * 2022-05-29 2023-12-07 Soreq Nuclear Research Center Silicon controlled rectifier with schottky anode contact

Also Published As

Publication number Publication date
NL7403063A (enrdf_load_stackoverflow) 1974-09-10
JPS49115684A (enrdf_load_stackoverflow) 1974-11-05
DE2410721A1 (de) 1974-09-12
JPS5416839B2 (enrdf_load_stackoverflow) 1979-06-25

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19940303