DE2410721A1 - Steuerbares halbleiter-gleichrichterelement - Google Patents

Steuerbares halbleiter-gleichrichterelement

Info

Publication number
DE2410721A1
DE2410721A1 DE2410721A DE2410721A DE2410721A1 DE 2410721 A1 DE2410721 A1 DE 2410721A1 DE 2410721 A DE2410721 A DE 2410721A DE 2410721 A DE2410721 A DE 2410721A DE 2410721 A1 DE2410721 A1 DE 2410721A1
Authority
DE
Germany
Prior art keywords
zone
rectifier element
semiconductor
type
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2410721A
Other languages
German (de)
English (en)
Inventor
Toshiro Kobayashi
Tokuro Soma
Hajime Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2410721A1 publication Critical patent/DE2410721A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE2410721A 1973-03-06 1974-03-06 Steuerbares halbleiter-gleichrichterelement Ceased DE2410721A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2646873A JPS5416839B2 (enrdf_load_stackoverflow) 1973-03-06 1973-03-06

Publications (1)

Publication Number Publication Date
DE2410721A1 true DE2410721A1 (de) 1974-09-12

Family

ID=12194336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2410721A Ceased DE2410721A1 (de) 1973-03-06 1974-03-06 Steuerbares halbleiter-gleichrichterelement

Country Status (4)

Country Link
JP (1) JPS5416839B2 (enrdf_load_stackoverflow)
DE (1) DE2410721A1 (enrdf_load_stackoverflow)
GB (1) GB1458579A (enrdf_load_stackoverflow)
NL (1) NL7403063A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
FR2538170A1 (fr) * 1982-12-21 1984-06-22 Int Rectifier Corp Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee
US4942444A (en) * 1978-08-10 1990-07-17 Siemens Aktiengesellschaft Thyristor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760891B2 (ja) * 1985-11-01 1995-06-28 日本電信電話株式会社 半導体装置
EP4533545A1 (en) * 2022-05-29 2025-04-09 Soreq Nuclear Research Center Silicon controlled rectifier with schottky anode contact

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942444A (en) * 1978-08-10 1990-07-17 Siemens Aktiengesellschaft Thyristor
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
FR2538170A1 (fr) * 1982-12-21 1984-06-22 Int Rectifier Corp Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee

Also Published As

Publication number Publication date
NL7403063A (enrdf_load_stackoverflow) 1974-09-10
JPS49115684A (enrdf_load_stackoverflow) 1974-11-05
JPS5416839B2 (enrdf_load_stackoverflow) 1979-06-25
GB1458579A (en) 1976-12-15

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Legal Events

Date Code Title Description
OD Request for examination
8131 Rejection