GB1457909A - Method for producing a semiconductor component protected against excess voltages - Google Patents

Method for producing a semiconductor component protected against excess voltages

Info

Publication number
GB1457909A
GB1457909A GB939874A GB939874A GB1457909A GB 1457909 A GB1457909 A GB 1457909A GB 939874 A GB939874 A GB 939874A GB 939874 A GB939874 A GB 939874A GB 1457909 A GB1457909 A GB 1457909A
Authority
GB
United Kingdom
Prior art keywords
junction
region
regions
sulphur
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB939874A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1457909A publication Critical patent/GB1457909A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
GB939874A 1973-03-02 1974-03-01 Method for producing a semiconductor component protected against excess voltages Expired GB1457909A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2310453A DE2310453C3 (de) 1973-03-02 1973-03-02 Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
GB1457909A true GB1457909A (en) 1976-12-08

Family

ID=5873620

Family Applications (1)

Application Number Title Priority Date Filing Date
GB939874A Expired GB1457909A (en) 1973-03-02 1974-03-01 Method for producing a semiconductor component protected against excess voltages

Country Status (5)

Country Link
US (1) US3919010A (cg-RX-API-DMAC7.html)
JP (1) JPS5048882A (cg-RX-API-DMAC7.html)
DE (1) DE2310453C3 (cg-RX-API-DMAC7.html)
FR (1) FR2220096B1 (cg-RX-API-DMAC7.html)
GB (1) GB1457909A (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3158738B2 (ja) * 1992-08-17 2001-04-23 富士電機株式会社 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路
DE4320780B4 (de) * 1993-06-23 2007-07-12 Robert Bosch Gmbh Halbleiteranordnung und Verfahren zur Herstellung
US5578506A (en) * 1995-02-27 1996-11-26 Alliedsignal Inc. Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device
US5815359A (en) * 1995-09-08 1998-09-29 Texas Instruments Incorporated Semiconductor device providing overvoltage protection against electrical surges of positive and negative polarities, such as caused by lightning
DE19942679C1 (de) * 1999-09-07 2001-04-05 Infineon Technologies Ag Verfahren zum Herstellen eines hochvolttauglichen Randabschlusses bei einem nach dem Prinzip der lateralen Ladungskompensation vorgefertigten Grundmaterialwafer
JP4126872B2 (ja) 2000-12-12 2008-07-30 サンケン電気株式会社 定電圧ダイオード
US9577079B2 (en) * 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954308A (en) * 1956-05-21 1960-09-27 Ibm Semiconductor impurity diffusion
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
US3573115A (en) * 1968-04-22 1971-03-30 Int Rectifier Corp Sealed tube diffusion process

Also Published As

Publication number Publication date
US3919010A (en) 1975-11-11
FR2220096A1 (cg-RX-API-DMAC7.html) 1974-09-27
DE2310453B2 (de) 1980-09-11
DE2310453A1 (de) 1974-09-26
JPS5048882A (cg-RX-API-DMAC7.html) 1975-05-01
FR2220096B1 (cg-RX-API-DMAC7.html) 1978-08-11
DE2310453C3 (de) 1981-11-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee