GB1456437A - Compound semiconductor layers - Google Patents

Compound semiconductor layers

Info

Publication number
GB1456437A
GB1456437A GB462474A GB462474A GB1456437A GB 1456437 A GB1456437 A GB 1456437A GB 462474 A GB462474 A GB 462474A GB 462474 A GB462474 A GB 462474A GB 1456437 A GB1456437 A GB 1456437A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
compound
gaas
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB462474A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB1456437A publication Critical patent/GB1456437A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
GB462474A 1973-01-31 1974-01-31 Compound semiconductor layers Expired GB1456437A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1310773A JPS562407B2 (enExample) 1973-01-31 1973-01-31

Publications (1)

Publication Number Publication Date
GB1456437A true GB1456437A (en) 1976-11-24

Family

ID=11823914

Family Applications (1)

Application Number Title Priority Date Filing Date
GB462474A Expired GB1456437A (en) 1973-01-31 1974-01-31 Compound semiconductor layers

Country Status (3)

Country Link
US (1) US3936321A (enExample)
JP (1) JPS562407B2 (enExample)
GB (1) GB1456437A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215516A (en) * 1988-02-29 1989-09-20 Mitsubishi Electric Corp A method of producing a compound semiconductor device
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2596777B1 (fr) * 1986-04-08 1994-01-21 Etat Francais Cnet Procede de preparation de semi-isolants 3-5 mono-cristallins par dopage et application des semi-isolants ainsi obtenus
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法
DE3839210A1 (de) * 1988-11-19 1990-05-23 Asea Brown Boveri Verfahren zum axialen einstellen der traegerlebensdauer
JPH0942244A (ja) * 1995-08-02 1997-02-10 Yuuma Kobo:Kk ボルト用アンカー
JP7169871B2 (ja) * 2018-12-26 2022-11-11 住重アテックス株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
BE791929A (fr) * 1971-12-02 1973-03-16 Western Electric Co Procede de fabrication de regions isolantes dans un corps de semi-conducteur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
GB2215516A (en) * 1988-02-29 1989-09-20 Mitsubishi Electric Corp A method of producing a compound semiconductor device
GB2215516B (en) * 1988-02-29 1990-11-28 Mitsubishi Electric Corp A method of producing a compound semiconductor device

Also Published As

Publication number Publication date
JPS562407B2 (enExample) 1981-01-20
JPS49102278A (enExample) 1974-09-27
US3936321A (en) 1976-02-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19940130