JPS562407B2 - - Google Patents
Info
- Publication number
- JPS562407B2 JPS562407B2 JP1310773A JP1310773A JPS562407B2 JP S562407 B2 JPS562407 B2 JP S562407B2 JP 1310773 A JP1310773 A JP 1310773A JP 1310773 A JP1310773 A JP 1310773A JP S562407 B2 JPS562407 B2 JP S562407B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P30/206—
-
- H10P30/208—
-
- H10P95/00—
-
- H10W10/00—
-
- H10W10/01—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1310773A JPS562407B2 (enExample) | 1973-01-31 | 1973-01-31 | |
| US05/436,802 US3936321A (en) | 1973-01-31 | 1974-01-25 | Method of making a compound semiconductor layer of high resistivity |
| GB462474A GB1456437A (en) | 1973-01-31 | 1974-01-31 | Compound semiconductor layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1310773A JPS562407B2 (enExample) | 1973-01-31 | 1973-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49102278A JPS49102278A (enExample) | 1974-09-27 |
| JPS562407B2 true JPS562407B2 (enExample) | 1981-01-20 |
Family
ID=11823914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1310773A Expired JPS562407B2 (enExample) | 1973-01-31 | 1973-01-31 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3936321A (enExample) |
| JP (1) | JPS562407B2 (enExample) |
| GB (1) | GB1456437A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0942244A (ja) * | 1995-08-02 | 1997-02-10 | Yuuma Kobo:Kk | ボルト用アンカー |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
| FR2596777B1 (fr) * | 1986-04-08 | 1994-01-21 | Etat Francais Cnet | Procede de preparation de semi-isolants 3-5 mono-cristallins par dopage et application des semi-isolants ainsi obtenus |
| JPH01220822A (ja) * | 1988-02-29 | 1989-09-04 | Mitsubishi Electric Corp | 化合物半導体装置の製造方法 |
| JPH01308063A (ja) * | 1988-06-07 | 1989-12-12 | Oki Electric Ind Co Ltd | 半導体抵抗素子及びその形成方法 |
| DE3839210A1 (de) * | 1988-11-19 | 1990-05-23 | Asea Brown Boveri | Verfahren zum axialen einstellen der traegerlebensdauer |
| JP7169871B2 (ja) * | 2018-12-26 | 2022-11-11 | 住重アテックス株式会社 | 半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3718502A (en) * | 1969-10-15 | 1973-02-27 | J Gibbons | Enhancement of diffusion of atoms into a heated substrate by bombardment |
| BE791929A (fr) * | 1971-12-02 | 1973-03-16 | Western Electric Co | Procede de fabrication de regions isolantes dans un corps de semi-conducteur |
-
1973
- 1973-01-31 JP JP1310773A patent/JPS562407B2/ja not_active Expired
-
1974
- 1974-01-25 US US05/436,802 patent/US3936321A/en not_active Expired - Lifetime
- 1974-01-31 GB GB462474A patent/GB1456437A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0942244A (ja) * | 1995-08-02 | 1997-02-10 | Yuuma Kobo:Kk | ボルト用アンカー |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS49102278A (enExample) | 1974-09-27 |
| US3936321A (en) | 1976-02-03 |
| GB1456437A (en) | 1976-11-24 |