GB1456255A - Introducing signal to charge-coupled circuit - Google Patents
Introducing signal to charge-coupled circuitInfo
- Publication number
- GB1456255A GB1456255A GB1023174A GB1023174A GB1456255A GB 1456255 A GB1456255 A GB 1456255A GB 1023174 A GB1023174 A GB 1023174A GB 1023174 A GB1023174 A GB 1023174A GB 1456255 A GB1456255 A GB 1456255A
- Authority
- GB
- United Kingdom
- Prior art keywords
- charge
- well
- electrodes
- voltage
- well depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005036 potential barrier Methods 0.000 abstract 2
- 238000003491 array Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000000644 propagated effect Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Networks Using Active Elements (AREA)
Abstract
1456255 Charge transfer devices RCA CORPORATION 7 March 1974 [13 June 1973] 10231/74 Heading H1K The amount of noise generated in introducing charge into the input of a charge coupled circuit is reduced by first feeding the charge into a potential well separated from the circuit input by a potential barrier, reducing the effective well depth to spill charge from the well to leave a charge proportional to the new well depth, which is then fed to the input by lowering the potential barrier. In the Fig. 2 arrangement a voltage pulse on electrode G 3 provides the barrier and reduction of the voltage on source diffusion S at time t 2 as shown with the voltages on electrodes G 1 and G 2 held constant causes the reduction in well depth, after which the pulse is removed from V 3 at time t 4 to allow the retained charge to flow to the well under the first phase electrode of a three-phase system, the cycle being repeated while the charge packet is propagated. In an alternative arrangement, Fig. 4, an additional electrode 30 maintained at a fixed voltage relative to the source is provided, changes in source voltage reducing the depth of the well under electrode 34 to a value determined by the difference in potential between electrodes 32 and 34, propagation being by a conventional two-phase system. In a modification of this the source voltage is fixed and the well depth reduced by altering the voltages on electrodes 32 and 34 which differ by the input voltage which thus determines final well depth. Alternatively electrodes 32 and 34 are at the same potential, the difference in thickness of the insulation between them determining the well depth. A similar result can be achieved by differences in charge in the insulating layer, in surface doping of the substrate, or in the work functions of the materials of electrodes 32 and 34. The arrangement may be used to supply " fat zero " charges in shift registers and imaging arrays to improve charge transfer efficiency.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36958073A | 1973-06-13 | 1973-06-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1456255A true GB1456255A (en) | 1976-11-24 |
Family
ID=23456040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1023174A Expired GB1456255A (en) | 1973-06-13 | 1974-03-07 | Introducing signal to charge-coupled circuit |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS548428B2 (en) |
| CA (1) | CA1096042A (en) |
| DE (1) | DE2411606A1 (en) |
| FR (1) | FR2233713A1 (en) |
| GB (1) | GB1456255A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2169445A (en) * | 1984-12-20 | 1986-07-09 | Werk Fernsehelektronik Veb | Input circuit for charge-coupled devices |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5653865B2 (en) * | 1973-11-07 | 1981-12-22 | ||
| DE2543615A1 (en) * | 1975-09-30 | 1977-04-07 | Siemens Ag | REGENERATION STAGE FOR LOAD SHIFTING ARRANGEMENTS |
| US4191895A (en) * | 1976-07-26 | 1980-03-04 | Rca Corporation | Low noise CCD input circuit |
| US4191896A (en) * | 1976-07-26 | 1980-03-04 | Rca Corporation | Low noise CCD input circuit |
| NL7610351A (en) * | 1976-09-17 | 1978-03-21 | Philips Nv | LOAD TRANSFER DEVICE. |
| JPS5353278A (en) * | 1976-10-25 | 1978-05-15 | Fujitsu Ltd | Facet zero input system for charge transfer device |
| JPS5780773A (en) * | 1980-11-07 | 1982-05-20 | Nec Corp | Charge coupled device and driving method therefor |
| JPS5848464A (en) * | 1981-09-17 | 1983-03-22 | Nec Corp | Charge transfer device |
-
1974
- 1974-03-07 GB GB1023174A patent/GB1456255A/en not_active Expired
- 1974-03-07 CA CA194,315A patent/CA1096042A/en not_active Expired
- 1974-03-08 FR FR7407987A patent/FR2233713A1/fr not_active Withdrawn
- 1974-03-11 DE DE19742411606 patent/DE2411606A1/en active Pending
- 1974-03-12 JP JP2848074A patent/JPS548428B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2169445A (en) * | 1984-12-20 | 1986-07-09 | Werk Fernsehelektronik Veb | Input circuit for charge-coupled devices |
| GB2169445B (en) * | 1984-12-20 | 1989-07-12 | Werk Fernsehelektronik Veb | Input circuit for charge-coupled devices |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2411606A1 (en) | 1975-01-09 |
| JPS5017940A (en) | 1975-02-25 |
| JPS548428B2 (en) | 1979-04-16 |
| FR2233713A1 (en) | 1975-01-10 |
| CA1096042A (en) | 1981-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19940306 |