GB1454323A - Semiconductor tehrmally sensitive switch structure - Google Patents

Semiconductor tehrmally sensitive switch structure

Info

Publication number
GB1454323A
GB1454323A GB4185574A GB4185574A GB1454323A GB 1454323 A GB1454323 A GB 1454323A GB 4185574 A GB4185574 A GB 4185574A GB 4185574 A GB4185574 A GB 4185574A GB 1454323 A GB1454323 A GB 1454323A
Authority
GB
United Kingdom
Prior art keywords
semiconductor
tehrmally
sensitive switch
switch structure
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4185574A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB1454323A publication Critical patent/GB1454323A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/387—Devices controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages

Landscapes

  • Thyristors (AREA)
  • Control Of Temperature (AREA)
GB4185574A 1973-09-26 1974-09-26 Semiconductor tehrmally sensitive switch structure Expired GB1454323A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48108107A JPS5060188A (enExample) 1973-09-26 1973-09-26

Publications (1)

Publication Number Publication Date
GB1454323A true GB1454323A (en) 1976-11-03

Family

ID=14476050

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4185574A Expired GB1454323A (en) 1973-09-26 1974-09-26 Semiconductor tehrmally sensitive switch structure

Country Status (5)

Country Link
JP (1) JPS5060188A (enExample)
CA (1) CA1005926A (enExample)
FR (1) FR2245089B1 (enExample)
GB (1) GB1454323A (enExample)
SE (1) SE405184B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151011A (en) * 1977-07-15 1979-04-24 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure
US5140394A (en) * 1988-07-26 1992-08-18 Texas Instruments Incorporated Electrothermal sensor apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266382A (en) * 1975-11-28 1977-06-01 Mitsubishi Electric Corp Indirectly-heated heat-sensitive thyristor
US4112458A (en) * 1976-01-26 1978-09-05 Cutler-Hammer, Inc. Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C
EP0208970B1 (de) * 1985-07-09 1990-05-23 Siemens Aktiengesellschaft MOSFET mit Temperaturschutz

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151011A (en) * 1977-07-15 1979-04-24 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure
US5140394A (en) * 1988-07-26 1992-08-18 Texas Instruments Incorporated Electrothermal sensor apparatus

Also Published As

Publication number Publication date
JPS5060188A (enExample) 1975-05-23
CA1005926A (en) 1977-02-22
FR2245089B1 (enExample) 1978-11-24
SE7412062L (enExample) 1975-03-27
DE2446104B2 (de) 1976-03-18
DE2446104A1 (de) 1975-04-03
SE405184B (sv) 1978-11-20
FR2245089A1 (enExample) 1975-04-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19940925