SE405184B - Temperaturstyrd halvledarstromstellare i vilken ingar ett temperaturkensligt tyristorelement - Google Patents

Temperaturstyrd halvledarstromstellare i vilken ingar ett temperaturkensligt tyristorelement

Info

Publication number
SE405184B
SE405184B SE7412062A SE7412062A SE405184B SE 405184 B SE405184 B SE 405184B SE 7412062 A SE7412062 A SE 7412062A SE 7412062 A SE7412062 A SE 7412062A SE 405184 B SE405184 B SE 405184B
Authority
SE
Sweden
Prior art keywords
temperature
bulleter
installer
controlled semiconductor
semiconductor
Prior art date
Application number
SE7412062A
Other languages
English (en)
Other versions
SE7412062L (sv
Inventor
J Nakata
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE7412062L publication Critical patent/SE7412062L/xx
Publication of SE405184B publication Critical patent/SE405184B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Control Of Temperature (AREA)
SE7412062A 1973-09-26 1974-09-25 Temperaturstyrd halvledarstromstellare i vilken ingar ett temperaturkensligt tyristorelement SE405184B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10810773A JPS5060188A (sv) 1973-09-26 1973-09-26

Publications (2)

Publication Number Publication Date
SE7412062L SE7412062L (sv) 1975-03-27
SE405184B true SE405184B (sv) 1978-11-20

Family

ID=14476050

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7412062A SE405184B (sv) 1973-09-26 1974-09-25 Temperaturstyrd halvledarstromstellare i vilken ingar ett temperaturkensligt tyristorelement

Country Status (5)

Country Link
JP (1) JPS5060188A (sv)
CA (1) CA1005926A (sv)
FR (1) FR2245089B1 (sv)
GB (1) GB1454323A (sv)
SE (1) SE405184B (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266382A (en) * 1975-11-28 1977-06-01 Mitsubishi Electric Corp Indirectly-heated heat-sensitive thyristor
US4112458A (en) * 1976-01-26 1978-09-05 Cutler-Hammer, Inc. Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C
JPS5420676A (en) * 1977-07-15 1979-02-16 Mitsubishi Electric Corp Production of semiconductor heat-sensitive switching elements
EP0208970B1 (de) * 1985-07-09 1990-05-23 Siemens Aktiengesellschaft MOSFET mit Temperaturschutz
US5140394A (en) * 1988-07-26 1992-08-18 Texas Instruments Incorporated Electrothermal sensor apparatus

Also Published As

Publication number Publication date
FR2245089A1 (sv) 1975-04-18
SE7412062L (sv) 1975-03-27
DE2446104B2 (de) 1976-03-18
FR2245089B1 (sv) 1978-11-24
GB1454323A (en) 1976-11-03
CA1005926A (en) 1977-02-22
JPS5060188A (sv) 1975-05-23
DE2446104A1 (de) 1975-04-03

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