SE7505227L - Optoelektroniskt halvledarelement. - Google Patents

Optoelektroniskt halvledarelement.

Info

Publication number
SE7505227L
SE7505227L SE7505227A SE7505227A SE7505227L SE 7505227 L SE7505227 L SE 7505227L SE 7505227 A SE7505227 A SE 7505227A SE 7505227 A SE7505227 A SE 7505227A SE 7505227 L SE7505227 L SE 7505227L
Authority
SE
Sweden
Prior art keywords
semiconductor element
optoelectronic semiconductor
optoelectronic
semiconductor
Prior art date
Application number
SE7505227A
Other languages
English (en)
Other versions
SE407128B (sv
Inventor
G Winstel
W Heywang
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7505227L publication Critical patent/SE7505227L/sv
Publication of SE407128B publication Critical patent/SE407128B/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
SE7505227A 1974-05-08 1975-05-06 Optoelektroniskt halvledarkopplingselement SE407128B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2422330A DE2422330A1 (de) 1974-05-08 1974-05-08 Optoelektronisches halbleiter-koppelelement

Publications (2)

Publication Number Publication Date
SE7505227L true SE7505227L (sv) 1975-11-10
SE407128B SE407128B (sv) 1979-03-12

Family

ID=5915010

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7505227A SE407128B (sv) 1974-05-08 1975-05-06 Optoelektroniskt halvledarkopplingselement

Country Status (8)

Country Link
JP (1) JPS50161184A (sv)
BE (1) BE828840A (sv)
CH (1) CH578255A5 (sv)
DE (1) DE2422330A1 (sv)
FR (1) FR2270679B1 (sv)
GB (1) GB1474846A (sv)
IT (1) IT1037694B (sv)
SE (1) SE407128B (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4399448A (en) * 1981-02-02 1983-08-16 Bell Telephone Laboratories, Incorporated High sensitivity photon feedback photodetectors
US4438447A (en) * 1982-01-18 1984-03-20 Bell Telephone Laboratories, Incorporated Multilayered optical integrated circuit
AUPM512194A0 (en) * 1994-04-15 1994-05-12 Chulalongkorn University Amorphous semiconductor photocoupler

Also Published As

Publication number Publication date
JPS50161184A (sv) 1975-12-26
SE407128B (sv) 1979-03-12
BE828840A (fr) 1975-09-01
CH578255A5 (sv) 1976-07-30
IT1037694B (it) 1979-11-20
GB1474846A (en) 1977-05-25
FR2270679B1 (sv) 1978-06-09
FR2270679A1 (sv) 1975-12-05
DE2422330A1 (de) 1975-11-13

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