GB1089575A - High-power switch - Google Patents
High-power switchInfo
- Publication number
- GB1089575A GB1089575A GB859266A GB859266A GB1089575A GB 1089575 A GB1089575 A GB 1089575A GB 859266 A GB859266 A GB 859266A GB 859266 A GB859266 A GB 859266A GB 1089575 A GB1089575 A GB 1089575A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- elements
- molybdenum
- conductor elements
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
- H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
- H01H9/541—Contacts shunted by semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Rectifiers (AREA)
Abstract
1,089,575. Arcing preventing in switches. BROWN, BOVERI & CO. Ltd. Feb. 28, 1966 [March 2, 1965], No. 8592/66. Heading H2B. A rectifier unit for shunting the contacts of a high-power switch, and wherein a control means then opens the circuit of the rectifier in the halfcycle during which it is non-conducting, comprises a column of disc-shaped semi-conductor rectifier elements (7) respectively separated by heat reservoir discs (8) of the same diameter as the semi-conductor elements but of sufficient thermal capacity to absorb the heat produced by a half-cycle of short-circuit current without a dangerous temperature rise, thus enabling relatively small semi-conductor elements to be used. The semi-conductor elements are of silicon and the heat reservoirs may be of molybdenum or tungsten. The column may be built up of cells each consisting of three discs in the sequence molybdenum silicon, molybdenum, the selected number of cells being readily soldered together for improving contact. Terminal leads may be brought out from the semi-conductor elements for connection to potential control elements or, if thyristors are used, to control apparatus.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH288365A CH423924A (en) | 1965-03-02 | 1965-03-02 | Switches for high power, with semiconductor valves |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1089575A true GB1089575A (en) | 1967-11-01 |
Family
ID=4243728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB859266A Expired GB1089575A (en) | 1965-03-02 | 1966-02-28 | High-power switch |
Country Status (3)
Country | Link |
---|---|
CH (1) | CH423924A (en) |
DE (1) | DE1228695B (en) |
GB (1) | GB1089575A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4488021A (en) * | 1981-11-12 | 1984-12-11 | Mitsubishi Denki Kabushiki Kaisha | Gas insulated disconnector |
GB2170654A (en) * | 1985-02-01 | 1986-08-06 | Greenwood Systems Limited | Switching arrangement |
GB2221794A (en) * | 1988-08-12 | 1990-02-14 | Ass Elect Ind | Circuit breaker |
FR2905796A1 (en) * | 2006-09-11 | 2008-03-14 | Schneider Electric Ind Sas | DEVICE AND METHOD FOR SWITCHING A POWER ELECTRIC CIRCUIT |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2412168A1 (en) * | 1977-12-15 | 1979-07-13 | Silicium Semiconducteur Ssc | OVERVOLTAGE DIODES |
JPS59215627A (en) * | 1983-05-23 | 1984-12-05 | 三菱電機株式会社 | Switch |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB926423A (en) * | 1960-03-17 | 1963-05-15 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor rectifiers |
AT226826B (en) * | 1960-09-27 | 1963-04-10 | Int Standard Electric Corp | High voltage rectifier |
-
1965
- 1965-03-02 CH CH288365A patent/CH423924A/en unknown
- 1965-03-23 DE DEA48707A patent/DE1228695B/en active Pending
-
1966
- 1966-02-28 GB GB859266A patent/GB1089575A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4488021A (en) * | 1981-11-12 | 1984-12-11 | Mitsubishi Denki Kabushiki Kaisha | Gas insulated disconnector |
GB2170654A (en) * | 1985-02-01 | 1986-08-06 | Greenwood Systems Limited | Switching arrangement |
GB2221794A (en) * | 1988-08-12 | 1990-02-14 | Ass Elect Ind | Circuit breaker |
FR2905796A1 (en) * | 2006-09-11 | 2008-03-14 | Schneider Electric Ind Sas | DEVICE AND METHOD FOR SWITCHING A POWER ELECTRIC CIRCUIT |
WO2008031671A1 (en) * | 2006-09-11 | 2008-03-20 | Schneider Electric Industries Sas | Device and method for switching an electrical power circuit |
Also Published As
Publication number | Publication date |
---|---|
CH423924A (en) | 1966-11-15 |
DE1228695B (en) | 1966-11-17 |
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