GB1443718A - Control of -blooming- in charge-coupled image sensing arrays - Google Patents
Control of -blooming- in charge-coupled image sensing arraysInfo
- Publication number
- GB1443718A GB1443718A GB4174973A GB4174973A GB1443718A GB 1443718 A GB1443718 A GB 1443718A GB 4174973 A GB4174973 A GB 4174973A GB 4174973 A GB4174973 A GB 4174973A GB 1443718 A GB1443718 A GB 1443718A
- Authority
- GB
- United Kingdom
- Prior art keywords
- charge
- electrodes
- drain
- transfer
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003491 array Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 6
- 229920005591 polysilicon Polymers 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28786072A | 1972-09-11 | 1972-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1443718A true GB1443718A (en) | 1976-07-21 |
Family
ID=23104672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4174973A Expired GB1443718A (en) | 1972-09-11 | 1973-09-05 | Control of -blooming- in charge-coupled image sensing arrays |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5122356B2 (id) |
| DE (1) | DE2345784C3 (id) |
| FR (1) | FR2199200B1 (id) |
| GB (1) | GB1443718A (id) |
| NL (1) | NL7312152A (id) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577115A (en) * | 1982-11-08 | 1986-03-18 | Rca Corporation | Apparatus for sensing transient phenomena in radiant energy images |
| WO2005098957A1 (en) * | 2004-04-07 | 2005-10-20 | E2V Technologies (Uk) Limited | Multiplication register for amplifying signal charge |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1522487A (en) * | 1974-08-29 | 1978-08-23 | Sony Corp | Solid state colour television cameras |
| JPS51131279A (en) * | 1975-05-08 | 1976-11-15 | Matsushita Electric Ind Co Ltd | Electric charge combination element |
| JPS51138175A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Method of manufacturing charge coupled device |
| JPS5915498B2 (ja) * | 1975-08-09 | 1984-04-10 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JPS5412582A (en) * | 1977-06-29 | 1979-01-30 | Hitachi Ltd | Semiconductor device |
| JPS5429519A (en) * | 1977-08-09 | 1979-03-05 | Fujitsu Ltd | Semiconductor pick up device |
| US4173064A (en) * | 1977-08-22 | 1979-11-06 | Texas Instruments Incorporated | Split gate electrode, self-aligned antiblooming structure and method of making same |
| US4251571A (en) * | 1978-05-02 | 1981-02-17 | International Business Machines Corporation | Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
| JPS559532U (id) * | 1978-06-30 | 1980-01-22 | ||
| FR2462828B1 (fr) * | 1979-07-25 | 1985-09-27 | Rca Corp | Procede de fabrication de dispositifs de formation d'image a substrat aminci pour tube analyseur de television par exemple |
| JPS5632776A (en) * | 1979-08-23 | 1981-04-02 | Sanyo Electric Co Ltd | Ccd image sensor |
| JPS60246673A (ja) * | 1984-05-22 | 1985-12-06 | Nec Corp | 固体撮像素子 |
| JPS60163876U (ja) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | 半導体撮像装置 |
| FR2578683B1 (fr) * | 1985-03-08 | 1987-08-28 | Thomson Csf | Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede |
-
1973
- 1973-09-04 NL NL7312152A patent/NL7312152A/xx unknown
- 1973-09-05 GB GB4174973A patent/GB1443718A/en not_active Expired
- 1973-09-11 DE DE2345784A patent/DE2345784C3/de not_active Expired
- 1973-09-11 JP JP48102578A patent/JPS5122356B2/ja not_active Expired
- 1973-09-11 FR FR7332675A patent/FR2199200B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577115A (en) * | 1982-11-08 | 1986-03-18 | Rca Corporation | Apparatus for sensing transient phenomena in radiant energy images |
| WO2005098957A1 (en) * | 2004-04-07 | 2005-10-20 | E2V Technologies (Uk) Limited | Multiplication register for amplifying signal charge |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2199200A1 (id) | 1974-04-05 |
| DE2345784C3 (de) | 1979-05-23 |
| DE2345784B2 (de) | 1976-12-16 |
| DE2345784A1 (de) | 1974-03-21 |
| NL7312152A (id) | 1974-03-13 |
| FR2199200B1 (id) | 1977-09-23 |
| JPS5122356B2 (id) | 1976-07-09 |
| JPS4966082A (id) | 1974-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19920905 |