GB1443718A - Control of -blooming- in charge-coupled image sensing arrays - Google Patents
Control of -blooming- in charge-coupled image sensing arraysInfo
- Publication number
- GB1443718A GB1443718A GB4174973A GB4174973A GB1443718A GB 1443718 A GB1443718 A GB 1443718A GB 4174973 A GB4174973 A GB 4174973A GB 4174973 A GB4174973 A GB 4174973A GB 1443718 A GB1443718 A GB 1443718A
- Authority
- GB
- United Kingdom
- Prior art keywords
- charge
- electrodes
- drain
- transfer
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003491 array Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 6
- 229920005591 polysilicon Polymers 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28786072A | 1972-09-11 | 1972-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1443718A true GB1443718A (en) | 1976-07-21 |
Family
ID=23104672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4174973A Expired GB1443718A (en) | 1972-09-11 | 1973-09-05 | Control of -blooming- in charge-coupled image sensing arrays |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5122356B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2345784C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2199200B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1443718A (enrdf_load_stackoverflow) |
| NL (1) | NL7312152A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577115A (en) * | 1982-11-08 | 1986-03-18 | Rca Corporation | Apparatus for sensing transient phenomena in radiant energy images |
| WO2005098957A1 (en) * | 2004-04-07 | 2005-10-20 | E2V Technologies (Uk) Limited | Multiplication register for amplifying signal charge |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1522487A (en) * | 1974-08-29 | 1978-08-23 | Sony Corp | Solid state colour television cameras |
| JPS51131279A (en) * | 1975-05-08 | 1976-11-15 | Matsushita Electric Ind Co Ltd | Electric charge combination element |
| JPS51138175A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Method of manufacturing charge coupled device |
| JPS5915498B2 (ja) * | 1975-08-09 | 1984-04-10 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JPS5412582A (en) * | 1977-06-29 | 1979-01-30 | Hitachi Ltd | Semiconductor device |
| JPS5429519A (en) * | 1977-08-09 | 1979-03-05 | Fujitsu Ltd | Semiconductor pick up device |
| US4173064A (en) * | 1977-08-22 | 1979-11-06 | Texas Instruments Incorporated | Split gate electrode, self-aligned antiblooming structure and method of making same |
| US4251571A (en) * | 1978-05-02 | 1981-02-17 | International Business Machines Corporation | Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
| JPS559532U (enrdf_load_stackoverflow) * | 1978-06-30 | 1980-01-22 | ||
| NL8004265A (nl) * | 1979-07-25 | 1981-01-27 | Rca Corp | Werkwijze voor het vervaardigen van een afbeeld- inrichting. |
| JPS5632776A (en) * | 1979-08-23 | 1981-04-02 | Sanyo Electric Co Ltd | Ccd image sensor |
| JPS60246673A (ja) * | 1984-05-22 | 1985-12-06 | Nec Corp | 固体撮像素子 |
| JPS60163876U (ja) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | 半導体撮像装置 |
| FR2578683B1 (fr) * | 1985-03-08 | 1987-08-28 | Thomson Csf | Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede |
-
1973
- 1973-09-04 NL NL7312152A patent/NL7312152A/xx unknown
- 1973-09-05 GB GB4174973A patent/GB1443718A/en not_active Expired
- 1973-09-11 FR FR7332675A patent/FR2199200B1/fr not_active Expired
- 1973-09-11 JP JP48102578A patent/JPS5122356B2/ja not_active Expired
- 1973-09-11 DE DE2345784A patent/DE2345784C3/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577115A (en) * | 1982-11-08 | 1986-03-18 | Rca Corporation | Apparatus for sensing transient phenomena in radiant energy images |
| WO2005098957A1 (en) * | 2004-04-07 | 2005-10-20 | E2V Technologies (Uk) Limited | Multiplication register for amplifying signal charge |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2199200A1 (enrdf_load_stackoverflow) | 1974-04-05 |
| NL7312152A (enrdf_load_stackoverflow) | 1974-03-13 |
| FR2199200B1 (enrdf_load_stackoverflow) | 1977-09-23 |
| DE2345784A1 (de) | 1974-03-21 |
| JPS5122356B2 (enrdf_load_stackoverflow) | 1976-07-09 |
| DE2345784C3 (de) | 1979-05-23 |
| JPS4966082A (enrdf_load_stackoverflow) | 1974-06-26 |
| DE2345784B2 (de) | 1976-12-16 |
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| JP2816063B2 (ja) | 電荷転送装置 | |
| GB1228471A (enrdf_load_stackoverflow) | ||
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| JPS63310172A (ja) | 電荷転送装置 | |
| US5406101A (en) | Horizontal charge coupled device | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19920905 |