JPS4966082A - - Google Patents

Info

Publication number
JPS4966082A
JPS4966082A JP48102578A JP10257873A JPS4966082A JP S4966082 A JPS4966082 A JP S4966082A JP 48102578 A JP48102578 A JP 48102578A JP 10257873 A JP10257873 A JP 10257873A JP S4966082 A JPS4966082 A JP S4966082A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48102578A
Other languages
Japanese (ja)
Other versions
JPS5122356B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4966082A publication Critical patent/JPS4966082A/ja
Publication of JPS5122356B2 publication Critical patent/JPS5122356B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/158Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP48102578A 1972-09-11 1973-09-11 Expired JPS5122356B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28786072A 1972-09-11 1972-09-11

Publications (2)

Publication Number Publication Date
JPS4966082A true JPS4966082A (enrdf_load_stackoverflow) 1974-06-26
JPS5122356B2 JPS5122356B2 (enrdf_load_stackoverflow) 1976-07-09

Family

ID=23104672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48102578A Expired JPS5122356B2 (enrdf_load_stackoverflow) 1972-09-11 1973-09-11

Country Status (5)

Country Link
JP (1) JPS5122356B2 (enrdf_load_stackoverflow)
DE (1) DE2345784C3 (enrdf_load_stackoverflow)
FR (1) FR2199200B1 (enrdf_load_stackoverflow)
GB (1) GB1443718A (enrdf_load_stackoverflow)
NL (1) NL7312152A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131279A (en) * 1975-05-08 1976-11-15 Matsushita Electric Ind Co Ltd Electric charge combination element
JPS51138175A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Method of manufacturing charge coupled device
JPS5220771A (en) * 1975-08-09 1977-02-16 Matsushita Electric Ind Co Ltd Manufacturing method of semi-conductor unit
JPS5412582A (en) * 1977-06-29 1979-01-30 Hitachi Ltd Semiconductor device
JPS5429519A (en) * 1977-08-09 1979-03-05 Fujitsu Ltd Semiconductor pick up device
JPS5435695A (en) * 1977-08-22 1979-03-15 Texas Instruments Inc Method of producing split gate electrode antiiblooming structure
JPS54144184A (en) * 1978-05-02 1979-11-10 Ibm Field effect type device
JPS559532U (enrdf_load_stackoverflow) * 1978-06-30 1980-01-22
JPS5632776A (en) * 1979-08-23 1981-04-02 Sanyo Electric Co Ltd Ccd image sensor
JPS60163876U (ja) * 1985-03-06 1985-10-31 富士通株式会社 半導体撮像装置
JPS60246673A (ja) * 1984-05-22 1985-12-06 Nec Corp 固体撮像素子

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1522487A (en) * 1974-08-29 1978-08-23 Sony Corp Solid state colour television cameras
FR2462828B1 (fr) * 1979-07-25 1985-09-27 Rca Corp Procede de fabrication de dispositifs de formation d'image a substrat aminci pour tube analyseur de television par exemple
US4577115A (en) * 1982-11-08 1986-03-18 Rca Corporation Apparatus for sensing transient phenomena in radiant energy images
FR2578683B1 (fr) * 1985-03-08 1987-08-28 Thomson Csf Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede
GB2413007A (en) * 2004-04-07 2005-10-12 E2V Tech Uk Ltd Multiplication register for amplifying signal charge

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131279A (en) * 1975-05-08 1976-11-15 Matsushita Electric Ind Co Ltd Electric charge combination element
JPS51138175A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Method of manufacturing charge coupled device
JPS5220771A (en) * 1975-08-09 1977-02-16 Matsushita Electric Ind Co Ltd Manufacturing method of semi-conductor unit
JPS5412582A (en) * 1977-06-29 1979-01-30 Hitachi Ltd Semiconductor device
JPS5429519A (en) * 1977-08-09 1979-03-05 Fujitsu Ltd Semiconductor pick up device
JPS5435695A (en) * 1977-08-22 1979-03-15 Texas Instruments Inc Method of producing split gate electrode antiiblooming structure
JPS54144184A (en) * 1978-05-02 1979-11-10 Ibm Field effect type device
JPS559532U (enrdf_load_stackoverflow) * 1978-06-30 1980-01-22
JPS5632776A (en) * 1979-08-23 1981-04-02 Sanyo Electric Co Ltd Ccd image sensor
JPS60246673A (ja) * 1984-05-22 1985-12-06 Nec Corp 固体撮像素子
JPS60163876U (ja) * 1985-03-06 1985-10-31 富士通株式会社 半導体撮像装置

Also Published As

Publication number Publication date
DE2345784A1 (de) 1974-03-21
DE2345784C3 (de) 1979-05-23
FR2199200A1 (enrdf_load_stackoverflow) 1974-04-05
JPS5122356B2 (enrdf_load_stackoverflow) 1976-07-09
DE2345784B2 (de) 1976-12-16
GB1443718A (en) 1976-07-21
NL7312152A (enrdf_load_stackoverflow) 1974-03-13
FR2199200B1 (enrdf_load_stackoverflow) 1977-09-23

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