GB1429895A - Red-emitting gallium phosphide device automat - Google Patents
Red-emitting gallium phosphide device automatInfo
- Publication number
- GB1429895A GB1429895A GB391574A GB391574A GB1429895A GB 1429895 A GB1429895 A GB 1429895A GB 391574 A GB391574 A GB 391574A GB 391574 A GB391574 A GB 391574A GB 1429895 A GB1429895 A GB 1429895A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- type
- gallium phosphide
- doped
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910005540 GaP Inorganic materials 0.000 title abstract 6
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title abstract 3
- 239000010410 layer Substances 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 229910052711 selenium Inorganic materials 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910001297 Zn alloy Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 238000004943 liquid phase epitaxy Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
1429895 Electroluminescence TOKYOSHIBAURA ELECTRIC CO Ltd 28 Jan 1974 [12 Feb 1973 9 Nov 1973] 3915/74 Heading C4S [Also in Division H1K] A red light emitting gallium phosphide device comprises an N-type GaP body having a surface layer doped with Te, S or Se with an impurity concentration from 2 x 10<SP>17</SP> to 5À8 x 10<SP>17</SP> cm.<SP>-3</SP> and not being doped with O, and a P-type gallium phosphide layer formed on the surface layer and doped with Zn and O to define a light emitting junction, the concentration of Te, S or Se being higher than that of Zn. Liquid phase epitaxy growth is detailed for apparatus as in Fig. 4 (not shown) including carbon body (11) and horizontally sliding plate (13) containing solution (15) of GaP with N- or P-type impurities, and GaP substrate (17). A temporary Au layer on the N-type layer provides a Schottky barrier whereby donor concentration may be determined by capacitance measurements. Electrodes are In and In-Zn alloy. Layer thicknesses are disclosed. The provision that N d should be greater than N a is discussed and concentrations outside the above range are disclosed. Also other devices with oxygen dopant also in the N-layer and N d >1 x 10<SP>18</SP> cm.<SP>-3</SP> are discussed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1721073A JPS49106785A (en) | 1973-02-12 | 1973-02-12 | |
| JP12546073A JPS5078286A (en) | 1973-11-09 | 1973-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1429895A true GB1429895A (en) | 1976-03-31 |
Family
ID=26353695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB391574A Expired GB1429895A (en) | 1973-02-12 | 1974-01-28 | Red-emitting gallium phosphide device automat |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA1018272A (en) |
| DE (1) | DE2406606A1 (en) |
| FR (1) | FR2217897B1 (en) |
| GB (1) | GB1429895A (en) |
| IT (1) | IT1008198B (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE754437A (en) * | 1969-08-08 | 1971-01-18 | Western Electric Co | IMPROVED ELECTROLUMINESCENT DEVICE |
-
1974
- 1974-01-28 GB GB391574A patent/GB1429895A/en not_active Expired
- 1974-01-29 CA CA191,192A patent/CA1018272A/en not_active Expired
- 1974-02-05 IT IT4814774A patent/IT1008198B/en active
- 1974-02-12 FR FR7404626A patent/FR2217897B1/fr not_active Expired
- 1974-02-12 DE DE19742406606 patent/DE2406606A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA1018272A (en) | 1977-09-27 |
| IT1008198B (en) | 1976-11-10 |
| DE2406606A1 (en) | 1974-08-22 |
| FR2217897A1 (en) | 1974-09-06 |
| FR2217897B1 (en) | 1978-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |