GB1478615A - Gallium phosphide crystals - Google Patents

Gallium phosphide crystals

Info

Publication number
GB1478615A
GB1478615A GB4402873A GB4402873A GB1478615A GB 1478615 A GB1478615 A GB 1478615A GB 4402873 A GB4402873 A GB 4402873A GB 4402873 A GB4402873 A GB 4402873A GB 1478615 A GB1478615 A GB 1478615A
Authority
GB
United Kingdom
Prior art keywords
crystal
gallium phosphide
gallium
indiffused
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4402873A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Secretary of State for Defence Canada
UK Secretary of State for Defence
Original Assignee
Secretary of State for Defence Canada
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Secretary of State for Defence Canada, UK Secretary of State for Defence filed Critical Secretary of State for Defence Canada
Priority to GB4402873A priority Critical patent/GB1478615A/en
Publication of GB1478615A publication Critical patent/GB1478615A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1478615 Solid state diffusion processes DEFENCE SECRETARY OF STATE FOR 19 Sept 1974 [19 Sept 1973 24 April 1974] 44028/73 and 18012/74 Heading H1K Zinc, cadmium, magnesium or beryllium is indiffused into a bulk grown liquid encapsulated pulled gallium phosphide crystal. The crystal is preferably a slice in the 111 plane cut from a Chokralski pulled crystal, the slice being lapped and etched by conventional means. Indiffusion preferably takes place in a sealed quartz ampoule in inert gas in the presence of Gallium and Gallium Phosphide vapour to prevent leaching from the crystal. A red electroluminescent diode comprises such a gallium phosphide crystal doped with oxygen and an acceptor, e.g. Zn or Cd, into which Zn, Cd, Mg or Be is indiffused, with an epitaxial layer of gallium phosphide and donor, e.g. S, Se, Te grown thereon. Alternatively a red electroluminescent diode may be prepared by indiffusing Zn or Cd into Me crystal doped with a donor and a deep level impurity e.g. oxygen to provide an excess of pole carriers, then outdiffusing part of the Zn or Cd to provide an excess of electron carriers in a surface layer, thus forming a P-N junction. Ohmic contacts may be provided by alloying with Au containing 2% Sn on the N side and Au containing 2% Zn on the P side.
GB4402873A 1974-09-19 1974-09-19 Gallium phosphide crystals Expired GB1478615A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4402873A GB1478615A (en) 1974-09-19 1974-09-19 Gallium phosphide crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4402873A GB1478615A (en) 1974-09-19 1974-09-19 Gallium phosphide crystals

Publications (1)

Publication Number Publication Date
GB1478615A true GB1478615A (en) 1977-07-06

Family

ID=10431429

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4402873A Expired GB1478615A (en) 1974-09-19 1974-09-19 Gallium phosphide crystals

Country Status (1)

Country Link
GB (1) GB1478615A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445623A1 (en) * 1978-12-26 1980-07-25 Matsushita Electric Ind Co Ltd PROCESS FOR TREATING A SEMICONDUCTOR SUBSTRATE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445623A1 (en) * 1978-12-26 1980-07-25 Matsushita Electric Ind Co Ltd PROCESS FOR TREATING A SEMICONDUCTOR SUBSTRATE

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee