GB1425956A - Gate controlled switches - Google Patents

Gate controlled switches

Info

Publication number
GB1425956A
GB1425956A GB1869373A GB1869373A GB1425956A GB 1425956 A GB1425956 A GB 1425956A GB 1869373 A GB1869373 A GB 1869373A GB 1869373 A GB1869373 A GB 1869373A GB 1425956 A GB1425956 A GB 1425956A
Authority
GB
United Kingdom
Prior art keywords
thyristor
current
notional
april
factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1869373A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1425956A publication Critical patent/GB1425956A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB1869373A 1972-04-20 1973-04-18 Gate controlled switches Expired GB1425956A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3976572A JPS533233B2 (enrdf_load_stackoverflow) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
GB1425956A true GB1425956A (en) 1976-02-25

Family

ID=12562021

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1869373A Expired GB1425956A (en) 1972-04-20 1973-04-18 Gate controlled switches

Country Status (6)

Country Link
JP (1) JPS533233B2 (enrdf_load_stackoverflow)
CA (1) CA982700A (enrdf_load_stackoverflow)
DE (1) DE2320412C3 (enrdf_load_stackoverflow)
FR (1) FR2181076B1 (enrdf_load_stackoverflow)
GB (1) GB1425956A (enrdf_load_stackoverflow)
NL (1) NL7305505A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3509745A1 (de) * 1984-04-17 1985-10-24 Mitsubishi Denki K.K., Tokio/Tokyo Abschaltthyristor und verfahren zur herstellung desselben

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS557026B2 (enrdf_load_stackoverflow) * 1974-05-15 1980-02-21

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1413219A (fr) * 1963-09-03 1965-10-08 Gen Electric Perfectionnement aux semiconducteurs de commutation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3509745A1 (de) * 1984-04-17 1985-10-24 Mitsubishi Denki K.K., Tokio/Tokyo Abschaltthyristor und verfahren zur herstellung desselben
US4710792A (en) * 1984-04-17 1987-12-01 Mitsubishi Denki Kabushiki Kaisha Gate turn-off thyristor

Also Published As

Publication number Publication date
DE2320412C3 (de) 1979-09-06
JPS493584A (enrdf_load_stackoverflow) 1974-01-12
FR2181076B1 (enrdf_load_stackoverflow) 1977-08-19
CA982700A (en) 1976-01-27
FR2181076A1 (enrdf_load_stackoverflow) 1973-11-30
DE2320412A1 (de) 1973-10-25
JPS533233B2 (enrdf_load_stackoverflow) 1978-02-04
NL7305505A (enrdf_load_stackoverflow) 1973-10-23
DE2320412B2 (de) 1979-01-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19930417