CA982700A - Gate controlled switch - Google Patents

Gate controlled switch

Info

Publication number
CA982700A
CA982700A CA169,178A CA169178A CA982700A CA 982700 A CA982700 A CA 982700A CA 169178 A CA169178 A CA 169178A CA 982700 A CA982700 A CA 982700A
Authority
CA
Canada
Prior art keywords
controlled switch
gate controlled
gate
switch
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA169,178A
Other languages
English (en)
Other versions
CA169178S (en
Inventor
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA982700A publication Critical patent/CA982700A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
CA169,178A 1972-04-20 1973-04-19 Gate controlled switch Expired CA982700A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3976572A JPS533233B2 (enrdf_load_stackoverflow) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
CA982700A true CA982700A (en) 1976-01-27

Family

ID=12562021

Family Applications (1)

Application Number Title Priority Date Filing Date
CA169,178A Expired CA982700A (en) 1972-04-20 1973-04-19 Gate controlled switch

Country Status (6)

Country Link
JP (1) JPS533233B2 (enrdf_load_stackoverflow)
CA (1) CA982700A (enrdf_load_stackoverflow)
DE (1) DE2320412C3 (enrdf_load_stackoverflow)
FR (1) FR2181076B1 (enrdf_load_stackoverflow)
GB (1) GB1425956A (enrdf_load_stackoverflow)
NL (1) NL7305505A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS557026B2 (enrdf_load_stackoverflow) * 1974-05-15 1980-02-21
JPS60220971A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1413219A (fr) * 1963-09-03 1965-10-08 Gen Electric Perfectionnement aux semiconducteurs de commutation

Also Published As

Publication number Publication date
NL7305505A (enrdf_load_stackoverflow) 1973-10-23
DE2320412C3 (de) 1979-09-06
FR2181076A1 (enrdf_load_stackoverflow) 1973-11-30
GB1425956A (en) 1976-02-25
DE2320412B2 (de) 1979-01-11
DE2320412A1 (de) 1973-10-25
JPS533233B2 (enrdf_load_stackoverflow) 1978-02-04
JPS493584A (enrdf_load_stackoverflow) 1974-01-12
FR2181076B1 (enrdf_load_stackoverflow) 1977-08-19

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