GB1423779A - Photon isolators - Google Patents
Photon isolatorsInfo
- Publication number
- GB1423779A GB1423779A GB674273A GB674273A GB1423779A GB 1423779 A GB1423779 A GB 1423779A GB 674273 A GB674273 A GB 674273A GB 674273 A GB674273 A GB 674273A GB 1423779 A GB1423779 A GB 1423779A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- detector
- emitter
- feb
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004812 Fluorinated ethylene propylene Substances 0.000 abstract 3
- 229920009441 perflouroethylene propylene Polymers 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000004809 Teflon Substances 0.000 abstract 1
- 229920006362 Teflon® Polymers 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 238000004382 potting Methods 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Amplifiers (AREA)
- Networks Using Active Elements (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22589672A | 1972-02-14 | 1972-02-14 | |
| US00408033A US3836793A (en) | 1972-02-14 | 1973-10-19 | Photon isolator with improved photodetector transistor stage |
| US475216A US3925801A (en) | 1972-02-14 | 1974-05-31 | Photon isolator with improved photodetector transistor stage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1423779A true GB1423779A (en) | 1976-02-04 |
Family
ID=27397537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB674273A Expired GB1423779A (en) | 1972-02-14 | 1973-02-12 | Photon isolators |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US3836793A (US06623731-20030923-C00012.png) |
| JP (1) | JPS5234352B2 (US06623731-20030923-C00012.png) |
| GB (1) | GB1423779A (US06623731-20030923-C00012.png) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3946423A (en) * | 1974-05-02 | 1976-03-23 | Motorola, Inc. | Opto-coupler |
| US3958175A (en) * | 1974-12-16 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Current limiting switching circuit |
| JPS5642148B2 (US06623731-20030923-C00012.png) * | 1975-01-24 | 1981-10-02 | ||
| US3994012A (en) * | 1975-05-07 | 1976-11-23 | The Regents Of The University Of Minnesota | Photovoltaic semi-conductor devices |
| GB1557685A (en) * | 1976-02-02 | 1979-12-12 | Fairchild Camera Instr Co | Optically coupled isolator device |
| US4109269A (en) * | 1976-12-27 | 1978-08-22 | National Semiconductor Corporation | Opto-coupler semiconductor device |
| JPS5394783A (en) * | 1976-12-29 | 1978-08-19 | Fujitsu Ltd | Photo coupler |
| FR2388412A1 (fr) * | 1977-04-18 | 1978-11-17 | Radiotechnique Compelec | Element isolant pour dispositif optoelectronique photocoupleur et dispositifs comportant un tel element |
| US4157560A (en) * | 1977-12-30 | 1979-06-05 | International Business Machines Corporation | Photo detector cell |
| US4163986A (en) * | 1978-05-03 | 1979-08-07 | International Business Machines Corporation | Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor |
| JPS5840973U (ja) * | 1981-09-12 | 1983-03-17 | 株式会社リコー | 手動型読取装置 |
| JPS5842622U (ja) * | 1981-09-14 | 1983-03-22 | ト−ヨ−カネツ株式会社 | スクレイパ−付ゲ−ジプレ−ト |
| US4694183A (en) * | 1985-06-25 | 1987-09-15 | Hewlett-Packard Company | Optical isolator fabricated upon a lead frame |
| US5148243A (en) * | 1985-06-25 | 1992-09-15 | Hewlett-Packard Company | Optical isolator with encapsulation |
| US5049527A (en) * | 1985-06-25 | 1991-09-17 | Hewlett-Packard Company | Optical isolator |
| US4863806A (en) * | 1985-06-25 | 1989-09-05 | Hewlett-Packard Company | Optical isolator |
| JPS63163728U (US06623731-20030923-C00012.png) * | 1986-09-29 | 1988-10-25 | ||
| US5031017A (en) * | 1988-01-29 | 1991-07-09 | Hewlett-Packard Company | Composite optical shielding |
| US6205654B1 (en) | 1992-12-11 | 2001-03-27 | Staktek Group L.P. | Method of manufacturing a surface mount package |
| US5484959A (en) * | 1992-12-11 | 1996-01-16 | Staktek Corporation | High density lead-on-package fabrication method and apparatus |
| DE59405248D1 (de) * | 1993-09-23 | 1998-03-19 | Siemens Ag | Optokoppler und Verfahren zu dessen Herstellung |
| US5483024A (en) * | 1993-10-08 | 1996-01-09 | Texas Instruments Incorporated | High density semiconductor package |
| JPH0883856A (ja) * | 1994-09-14 | 1996-03-26 | Rohm Co Ltd | 半導体記憶装置 |
| US6255141B1 (en) * | 1999-09-07 | 2001-07-03 | National Semiconductor Corporation | Method of packaging fuses |
| US6424375B1 (en) * | 1999-09-21 | 2002-07-23 | Pixel Devices, International | Low noise active reset readout for image sensors |
| US6572387B2 (en) | 1999-09-24 | 2003-06-03 | Staktek Group, L.P. | Flexible circuit connector for stacked chip module |
| US6608763B1 (en) | 2000-09-15 | 2003-08-19 | Staktek Group L.P. | Stacking system and method |
| JP3974322B2 (ja) * | 2000-12-07 | 2007-09-12 | 株式会社日立製作所 | 光半導体集積回路装置及び光記憶再生装置 |
| US6462408B1 (en) | 2001-03-27 | 2002-10-08 | Staktek Group, L.P. | Contact member stacking system and method |
| JP6345532B2 (ja) * | 2014-08-07 | 2018-06-20 | ルネサスエレクトロニクス株式会社 | 光結合装置の製造方法、光結合装置、および電力変換システム |
| JP2016086098A (ja) * | 2014-10-27 | 2016-05-19 | パナソニックＩｐマネジメント株式会社 | 光結合装置 |
| TWI630430B (zh) * | 2017-07-26 | 2018-07-21 | 茂達電子股份有限公司 | 光耦合裝置及其支架模組 |
| CN114078886A (zh) * | 2020-08-12 | 2022-02-22 | 京东方科技集团股份有限公司 | 感测基板和电子装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1264513C2 (de) * | 1963-11-29 | 1973-01-25 | Texas Instruments Inc | Bezugspotentialfreier gleichstromdifferenzverstaerker |
| US3535532A (en) * | 1964-06-29 | 1970-10-20 | Texas Instruments Inc | Integrated circuit including light source,photodiode and associated components |
| US3462606A (en) * | 1965-01-27 | 1969-08-19 | Versitron Inc | Photoelectric relay using positive feedback |
| US3424908A (en) * | 1966-10-19 | 1969-01-28 | Gen Electric | Amplifier for photocell |
| US3524047A (en) * | 1967-08-21 | 1970-08-11 | Ibm | Photosensitive sensing system |
| US3660669A (en) * | 1970-04-15 | 1972-05-02 | Motorola Inc | Optical coupler made by juxtaposition of lead frame mounted sensor and light emitter |
| US3742599A (en) * | 1970-12-14 | 1973-07-03 | Gen Electric | Processes for the fabrication of protected semiconductor devices |
| US3757175A (en) * | 1971-01-06 | 1973-09-04 | Soo Kim Chang | Tor chips mounted on a single substrate composite integrated circuits with coplnaar connections to semiconduc |
-
1973
- 1973-02-12 GB GB674273A patent/GB1423779A/en not_active Expired
- 1973-02-14 JP JP1752573A patent/JPS5234352B2/ja not_active Expired
- 1973-10-19 US US00408033A patent/US3836793A/en not_active Expired - Lifetime
-
1974
- 1974-05-31 US US475216A patent/US3925801A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5234352B2 (US06623731-20030923-C00012.png) | 1977-09-02 |
| DE2305439B2 (de) | 1977-04-28 |
| DE2305439A1 (de) | 1973-08-23 |
| US3836793A (en) | 1974-09-17 |
| JPS4886546A (US06623731-20030923-C00012.png) | 1973-11-15 |
| US3925801A (en) | 1975-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |