GB1420550A - Semiconductor processing furnaces - Google Patents

Semiconductor processing furnaces

Info

Publication number
GB1420550A
GB1420550A GB2640574A GB2640574A GB1420550A GB 1420550 A GB1420550 A GB 1420550A GB 2640574 A GB2640574 A GB 2640574A GB 2640574 A GB2640574 A GB 2640574A GB 1420550 A GB1420550 A GB 1420550A
Authority
GB
United Kingdom
Prior art keywords
tube
processing
semi
conductor
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2640574A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1420550A publication Critical patent/GB1420550A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/103—Mechanisms for moving either the charge or heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F27D11/02—Ohmic resistance heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
GB2640574A 1973-06-29 1974-06-14 Semiconductor processing furnaces Expired GB1420550A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00375190A US3842794A (en) 1973-06-29 1973-06-29 Apparatus for high temperature semiconductor processing

Publications (1)

Publication Number Publication Date
GB1420550A true GB1420550A (en) 1976-01-07

Family

ID=23479866

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2640574A Expired GB1420550A (en) 1973-06-29 1974-06-14 Semiconductor processing furnaces

Country Status (5)

Country Link
US (1) US3842794A (https=)
JP (1) JPS5024074A (https=)
DE (1) DE2430432A1 (https=)
FR (1) FR2235487B1 (https=)
GB (1) GB1420550A (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
FR2492960A1 (fr) * 1980-10-23 1982-04-30 Efcis Canne refractaire pour l'introduction et le retrait d'une nacelle dans un four de traitement chimique sous flux gazeux, et four utilisant une telle canne
JPS57176717A (en) * 1981-04-24 1982-10-30 Hitachi Ltd Vapor phase growing device
FR2522534A1 (fr) * 1982-03-05 1983-09-09 Atelier Electro Thermie Const Procede de refroidissement et dispositif de traitement d'une charge telle que des substrats mettant en oeuvre ce procede de refroidissement
US4436985A (en) * 1982-05-03 1984-03-13 Gca Corporation Apparatus for heat treating semiconductor wafers
JPS58130520A (ja) * 1982-12-24 1983-08-04 Hitachi Ltd 熱処理炉用操作部
US4492852A (en) * 1983-02-11 1985-01-08 At&T Bell Laboratories Growth substrate heating arrangement for UHV silicon MBE
US4503087A (en) * 1983-08-29 1985-03-05 Varian Associates, Inc. Process for high temperature drive-in diffusion of dopants into semiconductor wafers
US4554437A (en) * 1984-05-17 1985-11-19 Pet Incorporated Tunnel oven
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
DE19547601A1 (de) * 1995-12-20 1997-06-26 Sel Alcatel Ag Vorrichtung zum Sintern von porösen Schichten
US5892203A (en) * 1996-05-29 1999-04-06 International Business Machines Corporation Apparatus for making laminated integrated circuit devices
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
JP5772100B2 (ja) * 2011-03-15 2015-09-02 株式会社リコー 圧電素子の製造装置、圧電素子の製造方法、圧電素子、液滴吐出装置、及び印刷装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE760041A (fr) * 1970-01-02 1971-05-17 Ibm Procede et appareil de transfert de masse gazeuse
FR2114105A5 (en) * 1970-11-16 1972-06-30 Applied Materials Techno Epitaxial radiation heated reactor - including a quartz reaction chamber
US3737282A (en) * 1971-10-01 1973-06-05 Ibm Method for reducing crystallographic defects in semiconductor structures

Also Published As

Publication number Publication date
FR2235487B1 (https=) 1976-06-25
JPS5024074A (https=) 1975-03-14
US3842794A (en) 1974-10-22
DE2430432A1 (de) 1975-01-16
FR2235487A1 (https=) 1975-01-24

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee