GB1419695A - - Google Patents
Info
- Publication number
- GB1419695A GB1419695A GB1184073A GB1184073A GB1419695A GB 1419695 A GB1419695 A GB 1419695A GB 1184073 A GB1184073 A GB 1184073A GB 1184073 A GB1184073 A GB 1184073A GB 1419695 A GB1419695 A GB 1419695A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- mesa
- gaas
- laser
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 6
- 239000011521 glass Substances 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2564472A JPS5321275B2 (enrdf_load_html_response) | 1972-03-13 | 1972-03-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1419695A true GB1419695A (enrdf_load_html_response) | 1975-12-31 |
Family
ID=12171529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1184073A Expired GB1419695A (enrdf_load_html_response) | 1972-03-13 | 1973-03-12 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5321275B2 (enrdf_load_html_response) |
| DE (1) | DE2312162C3 (enrdf_load_html_response) |
| GB (1) | GB1419695A (enrdf_load_html_response) |
| NL (1) | NL159536B (enrdf_load_html_response) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4328508A (en) | 1979-04-02 | 1982-05-04 | Rca Corporation | III-V Quaternary alloy photodiode |
| EP0955704A3 (en) * | 1998-05-08 | 2007-09-05 | Sony Corporation | Photoelectric conversion element and method for manufacturing the same |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
| NL176323C (nl) * | 1975-03-11 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting voor het opwekken van incoherente straling. |
| JPS606118B2 (ja) * | 1975-03-12 | 1985-02-15 | 株式会社日立製作所 | 半導体レーザ装置 |
| JPS5215280A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Cleavage semiconductor laser equipped with side surface light take-out waveguide |
| JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
| DE2760112C2 (enrdf_load_html_response) * | 1976-07-02 | 1989-05-18 | N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl | |
| NL7607299A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Injektielaser. |
| JPS5842283A (ja) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | 埋込み型半導体レ−ザの製法 |
| JPS62157339A (ja) * | 1986-11-28 | 1987-07-13 | Hitachi Ltd | 情報再生装置 |
| US5250471A (en) * | 1988-12-26 | 1993-10-05 | The Furukawa Electric Co. | Method for manufacturing compound semiconductor devices including a step where the semiconductor is etched without exposure to light |
| US5359619A (en) * | 1992-02-20 | 1994-10-25 | Sumitomo Electric Industries, Ltd. | Multi-beam semiconductor laser and method for producing the same |
-
1972
- 1972-03-13 JP JP2564472A patent/JPS5321275B2/ja not_active Expired
-
1973
- 1973-03-12 NL NL7303449.A patent/NL159536B/xx not_active IP Right Cessation
- 1973-03-12 GB GB1184073A patent/GB1419695A/en not_active Expired
- 1973-03-12 DE DE2312162A patent/DE2312162C3/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4328508A (en) | 1979-04-02 | 1982-05-04 | Rca Corporation | III-V Quaternary alloy photodiode |
| EP0955704A3 (en) * | 1998-05-08 | 2007-09-05 | Sony Corporation | Photoelectric conversion element and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| NL159536B (nl) | 1979-02-15 |
| JPS5321275B2 (enrdf_load_html_response) | 1978-07-01 |
| DE2312162C3 (de) | 1978-03-09 |
| NL7303449A (enrdf_load_html_response) | 1973-09-17 |
| DE2312162A1 (de) | 1973-10-04 |
| DE2312162B2 (de) | 1977-07-14 |
| JPS4894378A (enrdf_load_html_response) | 1973-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |