GB1258360A - - Google Patents
Info
- Publication number
- GB1258360A GB1258360A GB1258360DA GB1258360A GB 1258360 A GB1258360 A GB 1258360A GB 1258360D A GB1258360D A GB 1258360DA GB 1258360 A GB1258360 A GB 1258360A
- Authority
- GB
- United Kingdom
- Prior art keywords
- grooves
- junction
- type
- type gaas
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910001297 Zn alloy Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4573270 | 1970-09-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1258360A true GB1258360A (enrdf_load_html_response) | 1971-12-30 |
Family
ID=10438353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1258360D Expired GB1258360A (enrdf_load_html_response) | 1970-09-25 | 1970-09-25 |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU464738B2 (enrdf_load_html_response) |
| GB (1) | GB1258360A (enrdf_load_html_response) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2304181A1 (fr) * | 1975-03-11 | 1976-10-08 | Philips Nv | Dispositif semi-conducteur pour engendrer un rayonnement incoherent et procede pour fabriquer un tel dispositif |
| GB2000374A (en) * | 1977-06-10 | 1979-01-04 | Hitachi Ltd | Light emitting semiconductor device |
| US4230997A (en) * | 1979-01-29 | 1980-10-28 | Bell Telephone Laboratories, Incorporated | Buried double heterostructure laser device |
| CN118412389A (zh) * | 2024-07-01 | 2024-07-30 | 陕西迪泰克新材料有限公司 | 用于碲锌镉晶体/碲化镉晶体的焊接电极结构及制备方法 |
-
1970
- 1970-09-25 GB GB1258360D patent/GB1258360A/en not_active Expired
-
1971
- 1971-09-03 AU AU33076/71A patent/AU464738B2/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2304181A1 (fr) * | 1975-03-11 | 1976-10-08 | Philips Nv | Dispositif semi-conducteur pour engendrer un rayonnement incoherent et procede pour fabriquer un tel dispositif |
| GB2000374A (en) * | 1977-06-10 | 1979-01-04 | Hitachi Ltd | Light emitting semiconductor device |
| GB2000374B (en) * | 1977-06-10 | 1982-02-10 | Hitachi Ltd | A light emitting semiconductor device |
| US4230997A (en) * | 1979-01-29 | 1980-10-28 | Bell Telephone Laboratories, Incorporated | Buried double heterostructure laser device |
| CN118412389A (zh) * | 2024-07-01 | 2024-07-30 | 陕西迪泰克新材料有限公司 | 用于碲锌镉晶体/碲化镉晶体的焊接电极结构及制备方法 |
| CN118412389B (zh) * | 2024-07-01 | 2024-11-29 | 陕西迪泰克新材料有限公司 | 用于碲锌镉晶体/碲化镉晶体的焊接电极结构及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU464738B2 (en) | 1975-09-04 |
| AU3307671A (en) | 1973-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
| PCNP | Patent ceased through non-payment of renewal fee |