AU464738B2 - Improvements in or relating to injection lasers - Google Patents

Improvements in or relating to injection lasers

Info

Publication number
AU464738B2
AU464738B2 AU33076/71A AU3307671A AU464738B2 AU 464738 B2 AU464738 B2 AU 464738B2 AU 33076/71 A AU33076/71 A AU 33076/71A AU 3307671 A AU3307671 A AU 3307671A AU 464738 B2 AU464738 B2 AU 464738B2
Authority
AU
Australia
Prior art keywords
relating
injection lasers
lasers
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU33076/71A
Other languages
English (en)
Other versions
AU3307671A (en
Inventor
HORACE BROOKE THOMPSON PETER RICHARD SELWAY and ANTHONY RICHARD GOODWIN GEORGE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Services Ltd
Original Assignee
Standard Telephone and Cables Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables Pty Ltd filed Critical Standard Telephone and Cables Pty Ltd
Publication of AU3307671A publication Critical patent/AU3307671A/en
Application granted granted Critical
Publication of AU464738B2 publication Critical patent/AU464738B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
AU33076/71A 1970-09-25 1971-09-03 Improvements in or relating to injection lasers Expired AU464738B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4573270 1970-09-25
GBGB45732/70 1970-09-25

Publications (2)

Publication Number Publication Date
AU3307671A AU3307671A (en) 1973-03-08
AU464738B2 true AU464738B2 (en) 1975-09-04

Family

ID=10438353

Family Applications (1)

Application Number Title Priority Date Filing Date
AU33076/71A Expired AU464738B2 (en) 1970-09-25 1971-09-03 Improvements in or relating to injection lasers

Country Status (2)

Country Link
AU (1) AU464738B2 (enrdf_load_html_response)
GB (1) GB1258360A (enrdf_load_html_response)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176323C (nl) * 1975-03-11 1985-03-18 Philips Nv Halfgeleiderinrichting voor het opwekken van incoherente straling.
JPS543483A (en) * 1977-06-10 1979-01-11 Hitachi Ltd Liminous semiconductor device
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device
CN118412389B (zh) * 2024-07-01 2024-11-29 陕西迪泰克新材料有限公司 用于碲锌镉晶体/碲化镉晶体的焊接电极结构及制备方法

Also Published As

Publication number Publication date
AU3307671A (en) 1973-03-08
GB1258360A (enrdf_load_html_response) 1971-12-30

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