NL7303449A - - Google Patents

Info

Publication number
NL7303449A
NL7303449A NL7303449A NL7303449A NL7303449A NL 7303449 A NL7303449 A NL 7303449A NL 7303449 A NL7303449 A NL 7303449A NL 7303449 A NL7303449 A NL 7303449A NL 7303449 A NL7303449 A NL 7303449A
Authority
NL
Netherlands
Application number
NL7303449A
Other versions
NL159536B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7303449A publication Critical patent/NL7303449A/xx
Publication of NL159536B publication Critical patent/NL159536B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
NL7303449.A 1972-03-13 1973-03-12 Halfgeleiderlaser en werkwijze voor het vervaardigen daarvan. NL159536B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2564472A JPS5321275B2 (enrdf_load_html_response) 1972-03-13 1972-03-13

Publications (2)

Publication Number Publication Date
NL7303449A true NL7303449A (enrdf_load_html_response) 1973-09-17
NL159536B NL159536B (nl) 1979-02-15

Family

ID=12171529

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7303449.A NL159536B (nl) 1972-03-13 1973-03-12 Halfgeleiderlaser en werkwijze voor het vervaardigen daarvan.

Country Status (4)

Country Link
JP (1) JPS5321275B2 (enrdf_load_html_response)
DE (1) DE2312162C3 (enrdf_load_html_response)
GB (1) GB1419695A (enrdf_load_html_response)
NL (1) NL159536B (enrdf_load_html_response)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
NL176323C (nl) * 1975-03-11 1985-03-18 Philips Nv Halfgeleiderinrichting voor het opwekken van incoherente straling.
JPS606118B2 (ja) * 1975-03-12 1985-02-15 株式会社日立製作所 半導体レーザ装置
JPS5215280A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
DE2760112C2 (enrdf_load_html_response) * 1976-07-02 1989-05-18 N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
US4328508A (en) 1979-04-02 1982-05-04 Rca Corporation III-V Quaternary alloy photodiode
JPS5842283A (ja) * 1981-09-04 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> 埋込み型半導体レ−ザの製法
JPS62157339A (ja) * 1986-11-28 1987-07-13 Hitachi Ltd 情報再生装置
US5250471A (en) * 1988-12-26 1993-10-05 The Furukawa Electric Co. Method for manufacturing compound semiconductor devices including a step where the semiconductor is etched without exposure to light
US5359619A (en) * 1992-02-20 1994-10-25 Sumitomo Electric Industries, Ltd. Multi-beam semiconductor laser and method for producing the same
JP4189610B2 (ja) * 1998-05-08 2008-12-03 ソニー株式会社 光電変換素子およびその製造方法

Also Published As

Publication number Publication date
NL159536B (nl) 1979-02-15
JPS5321275B2 (enrdf_load_html_response) 1978-07-01
GB1419695A (enrdf_load_html_response) 1975-12-31
DE2312162C3 (de) 1978-03-09
DE2312162A1 (de) 1973-10-04
DE2312162B2 (de) 1977-07-14
JPS4894378A (enrdf_load_html_response) 1973-12-05

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: HITACHI